KSC2331R(TO-92L) [JCST]
Transistor;
| 型号： | KSC2331R(TO-92L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO-92L
KSC2331 TRANSISTOR (NPN)
1.EMITTER
FEATURE
2.COLLECTOR
3.BASE
z
z
z
z
Complement to KSA931
High Collector-Base Voltage: VCBO=80V
Collector Current: IC=700mA
Collector Dissipation: PC=1W
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
80
Unit
V
60
V
8
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
700
1
mA
W
℃
PC
TJ
150
-55-150
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC= 100μA,IE=0
80
60
8
V
V
V
IC= 10mA,IB=0
IE= 10μA,IC=0
VCB=60V,IE=0
0.1
0.1
240
0.7
1.2
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
μA
DC current gain
hFE
VCE=2V,IC=50mA
IC=500m A,IB=50mA
IC=500mA,IB=50mA
VCB=10V,IE=0,f=1MHz
VCE=10V,IC=50mA
40
30
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE(sat)
Cob
V
V
Collector output capacitance
Transition frequency
8
pF
f T
MHz
CLASSIFICATION OF hFE
Rank
R
O
Y
40-80
70-140
120-240
Range
A,Jun,2011
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