KTA1270O [JCST]
Transistor;
| 型号： | KTA1270O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTA1270
TRANSISTOR (PNP)
TO-92
FEATURES
1.EMITTER
General Purpose Application Switching Application
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-35
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-30
V
-5
V
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
-0.5
A
PC
500
mW
TJ
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC= -100µA, IE=0
IC= -1mA , IB=0
IE= -100µA, IC=0
VCB= -35 V , IE=0
-35
-30
-5
V
V
V
-0.1
-0.1
240
µA
µA
Emitter cut-off current
IEBO
VEB= -5 V ,
IC=0
hFE1
VCE=-1 V, IC= -100mA
VCE=-6 V, IC= -400mA
IC= -100mA, IB= -10mA
VCE= -1V, IC= -100mA
70
25
DC current gain
hFE2
Collector-emitter saturation voltage
VCE(sat)
VBE(on)
-0.25
-1
V
V
Base-emitter
voltage
VCE=-6 V, IC= -20mA
f =100MHz
Transition frequency
200
13
MHz
pF
f T
Collector output capacitance
Cob
VCB=-6V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
O
Y
hFE(1)
Range
70-140
25(min)
120-240
40(min)
hFE(2)
A,June,2011
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