KTA1275O [JCST]
Transistor;
| 型号： | KTA1275O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 放大器 晶体管 |
| 文件： | 总1页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
KTA1275 TRANSISTOR (PNP)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
z
High Voltage
Large Continuous Collector Current Capability
Complementary to KTC3228
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
-160
-160
-6
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current
-1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
0.75
167
W
RθJA
Tj
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-160
-160
-6
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= -1mA,IE=0
IC=-10mA,IB=0
V
IE=-1mA,IC=0
V
VCB=-150V,IE=0
-1
-1
μA
μA
Emitter cut-off current
IEBO
VEB=-6V,IC=0
DC current gain
hFE
VCE=-5V, IC=-200mA
IC=-500mA,IB=-50mA
VCE=-5V, IC=-5mA
VCB=-10V,IE=0, f=1MHz
VCE=-5V,IC=-200mA
60
-0.45
15
320
-1.5
-0.75
35
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
pF
Collector output capacitance
Transition frequency
Cob
fT
MHz
CLASSIFICATION OF hFE
RANK
R
O
Y
RANGE
60-120
100-200
160-320
A,Dec,2010
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