KTA1298O [JCST]
Transistor;
| 型号： | KTA1298O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：450K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
KTA1298
TRANSISTOR (PNP)
1. BASE
2. EMITTER
3. COLLECTOR
FEATURES
z
Low frequency power amplifier application
Power switching application
z
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
-35
-30
-5
-0.8
200
Unit
V
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous
Collector Dissipation
PC*
mW
TJ
Junction Temperature
Storage Temperature
150
℃
℃
Tstg
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IC=- 1mA,IE=0
-35
-30
-5
V
V
IC= -10mA, IB=0
IE=-1mA, IC=0
V
VCB=-30 V,IE=0
-0.1
-0.1
320
μA
μA
Emitter cut-off current
IEBO
VEB= -5V,IC=0
hFE(1)
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-500mA, IB= -20mA
VCE=-1V, IC=-10mA
100
40
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base- emitter voltage
VCE(sat)
VBE
-0.4
-0.8
V
V
-0.5
Transition frequency
fT
VCE=-5V, IC=-10mA,
120
13
MHz
pF
Collector output capacitance
Cob
VCB=-10V, IE=0,f=1MHz
CLASSIFICATION OF hFE(1)
Rank
O
100-200
IO
Y
160-320
IY
Range
MARKING
A,May,2011
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