KTC1027Y [JCST]
Transistor;
| 型号： | KTC1027Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
KTC1027 TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
Complementary to KTA1023
High Voltage Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
120
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
120
V
5
V
Collector Current
0.8
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
0.75
167
W
RθJA
Tj
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
120
120
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=1mA,IE=0
IC=10mA,IB=0
V
IE=1mA,IC=0
V
VCB=120V,IE=0
0.1
0.1
240
1
μA
μA
Emitter cut-off current
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=5V, IC=100mA
IC=500mA,IB=50mA
VCE=5V, IC=500mA
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=100mA
80
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
1
30
pF
Collector output capacitance
Transition frequency
Cob
fT
120
MHz
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
80-160
120-240
A,Dec,2010
相关型号：
©2020 ICPDF网 联系我们和版权申明