KTC3203Y [JCST]
Transistor;
| 型号： | KTC3203Y |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor 晶体管 |
| 文件： | 总1页 (文件大小：294K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
KTC3203
TRANSISTOR (NPN)
TO-92
FEATURES
1. EMITTER
2. COLLECTOR
3. BASE
z
Complementary to KTA1271
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
35
Unit
V
30
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
800
625
150
-55-150
mA
mW
℃
PC
TJ
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC = 0.1mA, IB=0
IC = 10mA, IB=0
IE= 0.1mA, IC=0
VCB= 35V , IE=0
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
35
30
5
V
V
0.1
0.2
0.1
320
μA
μA
μA
Collector cut-off current
ICEO
IEBO
VCE= 25V , IB=0
Emitter cut-off current
VEB= 5V, IC=0
hFE(1)
hFE(2)
VCE(sat)
VBE
VCE=1V, IC= 100mA
VCE=1V, IC= 700mA
IC= 500 mA, IB= 20mA
VCE= 1V, IC= 10mA
VCE= 5 V, IC= 10mA
VCB=10V,IE= 0,f=1MHz
100
35
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
0.5
0.8
V
V
Transition frequency
f T
120
13
MHz
pF
Collector Output Capacitance
Cob
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
100-200
160-320
A,June,2011
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