KTC3205Y(SOT-89-3L) [JCST]
Transistor;
| 型号： | KTC3205Y(SOT-89-3L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTC3205 TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
High current application
Complementary to KTA1273
z
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
V
30
5
2
V
Collector Current -Continuous
Collector Dissipation
A
PC
0.5
W
℃
TJ, Tstg
Junction and Storage Temperature
-55~150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)
CBO
IC= 1mA , IE=0
30
30
5
V
V(BR)
CEO
IC= 10mA, IB=0
V
V(BR)
EBO
IE= 1mA, IC=0
V
ICBO
IEBO
VCB= 30V, IE=0
0.1
0.1
320
2.0
1.0
µA
µA
Emitter cut-off current
VEB= 5V, IC=0
DC current gain
hFE
VCE= 2 V, IC= 500 mA
IC= 1.5A, IB= 30 mA
VCE=2V, IC= 500mA
100
Collector-emitter saturation voltage
Base-emitter voltage
VCE (sat)
VBE
V
V
Transition frequency
V
CE=2V, IC= 500mA
120
13
MHz
fT
VCB=10V,
Collector Output Capacitance
pF
Cob
IE=0V,f=1MHZ
CLASSIFICATION OF hFE
Rank
O
Y
Range
100-200
160-320
A,Jun,2011
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