KTC3880SO [JCST]
Transistor;型号: | KTC3880SO |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | Transistor 晶体 晶体管 光电二极管 放大器 |
文件: | 总1页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
1. BASE
KTC3880S TRANSISTOR (NPN)
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
2. 4
1. 3
PCM:
150
mW (Tamb=25℃)
Collector current
ICM:
20
40
mA
V
Collector-base voltage
V(BR)CBO
:
Operating and storage junction temperature range
Unit: mm
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS( Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=100µA, IE=0
Ic=1mA, IB=0
MIN
40
30
4
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V
V
IE=100µA, IC=0
µA
µA
VCB=18V, IE=0
0.5
0.5
200
IEBO
VEB=4V, IC=0
hFE(1)
DC current gain
VCE=6V, IC=1mA
40
MHz
pF
Transition frequency
fT
VCE=6V, IC=1mA
500
1
Cob
Collector output capacitance
Noise figure
V
CB=6V, IE=0, f=1MHz
NF
5
dB
V
CE=6V, Ic=1mA, f=100MHZ
CLASSIFICATION OF hFE(1)
Rank
R
O
Y
Range
40-80
70-140
AQO
100-200
Marking
AQR
AQY
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