KTC4379(SOT-89-3L) [JCST]
Transistor;
| 型号： | KTC4379(SOT-89-3L) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：673K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
SOT-89-3L
KTC4379 TRANSISTOR (NPN)
1. BASE
FEATURES
z
z
z
Low saturation voltage
2. COLLECTOR
3. EMITTER
High speed switching time
Complementary to KTA1666
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
50
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
2
A
PC
500
150
-55~150
mW
TJ
℃
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
50
50
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=1mA, IE=0
V(BR)CEO IC=10mA, IB=0
V(BR)EBO IE=1mA, IC=0
V
V
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCB=50V, IE=0
0.1
0.1
μA
μA
Emitter cut-off current
VEB=5V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=1.5A
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCB=10V, IE=0, f=1MHz
70
40
240
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.5
1.2
V
V
120
30
MHz
pF
Collector output capacitance
Turn on Time
Cob
ton
0.1
1.0
0.1
Switching Time
tstg
VCC=30V, IC=1A, IB1=-IB2=-0.05A
μs
Storage Time
Fall Time
tf
CLASSIFICATION OF hFE(1)
Rank
O
Y
Range
70-140
UO
120-240
UY
Marking
A,Jun,2011
相关型号：
KTC4419
TRIPLE DIFFUSED PNP TRANSISTOR(SWITCHING REGULATOR, HIGH VOLTAGE, HIGH SPEED DC-DC CONVERTER)
KEC
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