KTD1351O [JCST]
Transistor;
| 型号： | KTD1351O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TO – 220
KTD1351 TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
Low Saturations Voltage
APPLICATIONS
z
General Purpose Applications
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
60
Collector-Emitter Voltage
Emitter-Base Voltage
60
V
7
V
Collector Current
3
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
W
RθJA
Tj
63
℃/W
℃
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
60
60
7
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=100µA,IE=0
IC=50mA,IB=0
V
IE=100µA,IC=0
VCB=60V,IE=0
V
0.1
0.1
300
1
mA
mA
Emitter cut-off current
IEBO
VEB=7V,IC=0
DC current gain
hFE
VCE=5V, IC=0.5A
IC=2A,IB=0.2A
VCE=5V, IC=0.5A
VCB=10V,IE=0, f=1MHz
VCE=5V,IC=0.5A
60
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
1
35
3
pF
Collector output capacitance
Transition frequency
Cob
fT
MHz
CLASSIFICATION OF hFE
RANK
O
Y
GR
150-300
RANGE
60-120
100-200
A,Dec,2010
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