KTD2061O [JCST]
Transistor;
| 型号： | KTD2061O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
TO – 220F
KTD2061 TRANSISTOR (NPN)
1. BASE
FEATURES
2. COLLECTOR
3. EMITTER
z
z
z
z
High Breakdown Voltage
High Transition Frequency
High Current
Complementary to KTB1369
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
200
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
180
5
V
Collector Current
2
2
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
W
℃/W
℃
RθJA
Tj
62.5
150
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
200
180
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
IC=100µA,IE=0
IC=10mA,IB=0
V
IE=10µA,IC=0
V
VCB=200V,IE=0
1
1
μA
μA
IEBO
VEB=5V,IC=0
DC current gain
hFE
VCE=10V, IC=400mA
IC=500mA,IB=50mA
VCE=5V, IC=500mA
VCE=10V,IC=400mA
70
240
1
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
1
fT
100
MHz
Transition frequency
CLASSIFICATION OF hFE
RANK
O
Y
RANGE
70-140
120-240
A,Dec,2010
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