KTD863O [JCST]
Transistor;
| 型号： | KTD863O |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92L Plastic-Encapsulate Transistors
TO – 92L
KTD863 TRANSISTOR (NPN)
1. EMITTER
2. COLLECTOR
3. BASE
FEATURES
z
z
z
z
High Voltage
High Current
High Transition Frequency
Wide Area of Safe Operation
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
Value
Unit
V
60
60
Collector-Emitter Voltage
Emitter-Base Voltage
V
5
V
Collector Current
1
A
PC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
0.75
167
150
-55~+150
W
RθJA
Tj
℃/W
℃
℃
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
60
60
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC= 100µA,IE=0
IC=1mA,IB=0
V
IE=100µA,IC=0
V
VCB=50V,IE=0
1
1
μA
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
hFE(1)
VCE=2V, IC=50mA
VCE=2V, IC=1A
60
30
320
DC current gain
hFE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
VCE(sat)
VBE (sat)
Cob
IC=500mA,IB=50mA
IC=500mA,IB=50mA
VCB=10V,IE=0, f=1MHz
VCE=10V,IC=50mA
0.5
1.2
V
V
12
pF
fT
150
MHz
CLASSIFICATION OF hFE(1)
RANK
O
Y
GR
160-320
RANGE
60-120
100-200
A,Dec,2010
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