M28SC(SOT-23) [JCST]
Transistor;
| 型号： | M28SC(SOT-23) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
M28S TRANSISTOR (NPN)
SOT–23
FEATURES
Excellent hFE Linearity
High DC Current Gain
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
1. BASE
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
2. EMITTER
3. COLLECTOR
Collector-Base Voltage
40
V
Collector-Emitter Voltage
Emitter-Base Voltage
20
V
6
1
Collector Current
A
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
200
mW
℃/W
℃
PC
RΘJA
Tj
625
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO IC=0.1mA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=0.1mA, IC=0
40
20
6
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
ICBO
ICEO
VCB=35V, IE=0
0.1
5
µA
µA
µA
VCE=20V, IB=0
Collector cut-off current
IEBO
VEB=5V, IC=0
0.1
Emitter cut-off current
hFE(1)
hFE(2)
hFE(3)
hFE(4)
VCE(sat)
fT
VCE=1V, IC=1mA
290
300
300
300
VCE=1V, IC=100mA
VCE=1V, IC=300mA
VCE=1V, IC=500mA
IC=600mA, IB=20mA
VCE=10V,IE=50mA, f=1MHz
VCB=10V, IE=0, f=1MHz
1000
0.55
DC current gain
V
Collector-emitter saturation voltage
Transition frequency
100
MHz
pF
Cob
9
Collector output capacitance
CLASSIFICATION OF hFE(2)
RANK
B
C
D
RANGE
300–550
500–700
28S
650–1000
MARKING
A,Oct,2010
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