M8050 [JCST]
TRANSISTOR ( NPN ); 晶体管( NPN )型号: | M8050 |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | TRANSISTOR ( NPN ) |
文件: | 总3页 (文件大小:258K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8050
TRANSISTOR ( NPN )
TO— 92
FEATURES
1.EMITTER
2. BASE
Power dissipation
PCM
Collector current
ICM
:
0.625
W(Tamb=25℃)
3. COLLECTOR
:
1
A
V
1 2 3
Collector-base voltage
V(BR)CBO : 40
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
40
MAX
UNIT
V
Ic= 100μA , IE=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
*
IC=0.1mA , IB=0
IE= 100μA, IC=0
VCB= 35V , IE=0
VCE= 20V , IB=0
VCE=1V, IC=5mA
25
6
V
V
μA
0.1
0.1
μA
Collector cut-off current
ICEO
hFE(1)
45
80
40
DC current gain
hFE(2)
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC= 800mA, IB=80mA
IC=800mA, IB= 80mA
300
hFE(3)
VCE(sat)
VBE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.5
1.2
V
V
Transition frequency
f T
VCE=6V, IC= 20mA , f=30MHz
150
MHz
* Pulse Test :pulse width ≤ 300µs,duty cycle ≤ 2%。
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
D
b
φ
e
e1
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
3.300
1.100
0.380
0.360
4.400
3.430
4.300
3.700
1.400
0.550
0.510
4.700
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.146
0.055
0.022
0.020
0.185
A
A1
b
c
D
D1
E
4.700
0.185
1.270TYP
0.050TYP
e
2.440
2.640
14.500
1.600
0.380
0.096
0.555
0.104
0.571
0.063
0.015
e1
L
14.100
Ö
0.000
0.000
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