MBR1090FCT [JCST]
Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, PLASTIC, TO-220F, 3 PIN;
| 型号： | MBR1090FCT |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 90V V(RRM), Silicon, TO-220AB, PLASTIC, TO-220F, 3 PIN 局域网 功效 瞄准线 二极管 |
| 文件： | 总3页 (文件大小：728K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR1060, 70, 80, 90, 100FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
1. ANODE
2. CATHODE
3. ANODE
FEATURES
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Value
Symbol
Parameter
Unit
MBR10
60FCT
MBR10
70FCT
MBR10
80FCT
MBR10
90FCT
MBR10
100FCT
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VR
60
42
70
49
80
90
63
100
70
V
RMS reverse voltage
56
10
V
A
VR(RMS)
IO
Average rectified output current
Non-Repetitive peak forward surge current
8.3ms half sine wave
120
A
IFSM
Power dissipation
2
50
W
℃/W
℃
PD
RΘJA
Tj
Thermal resistance from junction to ambient
Junction temperature
125
Storage temperature
-55~+150
Tstg
℃
C,Jan,2014
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions
Min
Typ
Max
Unit
MBR1060FCT
MBR1070FCT
MBR1080FCT
MBR1090FCT
MBR10100FCT
MBR1060FCT
60
70
V(BR)
IR=0.1mA
V
Reverse voltage
80
90
100
VR=60V
VR=70V
VR=80V
VR=90V
MBR1070FCT
MBR1080FCT
MBR1090FCT
IR
0.1
mA
Reverse current
MBR10100FCT
MBR1060FCT
VR=100V
IF=5A
0.8
VF(1)
VF(2)
Ctot
V
Forward voltage
MBR1070-100FCT
MBR1060-100FCT
MBR1060FCT
0.85
0.95
IF=10A
150
VR=4V,f=1MHz
pF
Typical total capacitance
MBR1070-100FCT
150
C,Jan,2014
Typical Characteristics
MBR10100FCT
Reverse Characteristics
Forward Characteristics
10
1000
100
10
Ta=100℃
Ta=100℃
1
1
Ta=25℃
Ta=25℃
0.1
0.01
0.1
200
400
600
800
0
20
40
60
80
100
REVERSE VOLTAGE VR (V)
FORWARD VOLTAGE VF (mV)
Power Derating Curve
Capacitance Characteristics Per Diode
350
2.5
2.0
1.5
1.0
0.5
0.0
Ta=25℃
f=1MHz
300
250
200
150
100
50
0
0
5
10
15
20
0
25
50
75
100
125
150
REVERSE VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta (℃)
C,Jan,2014
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