MMBT3904M [JCST]
TRANSISTOR; 晶体管
| 型号： | MMBT3904M |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR |
| 文件： | 总3页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
C
MMBT3904M TRANSISTOR
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
TOP
DESCRIPTION
NPN Epitaxial Silicon Transistor
B
E
E
B
FEATURES
C
1. BASE
Epitaxial Planar Die Construction
Complementary PNP Type Available (MMBT3906M)
Ultra-Small Surface Mount Package
Also Available in Lead Free Version
2. EMITTER
3. COLLECTOR
BACK
APPLICATION
General Purpose Amplifier, switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING:1N
C
1N
B
E
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol
Parameter
Value
60
Units
V
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
IC
40
V
6
V
Collector Current -Continuous
Collector Dissipation
0.2
A
PC
0.15
150
-55-150
W
℃
℃
TJ
Junction Temperature
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=10µA,IE=0
V(BR)CEO IC=1mA,IB=0
V(BR)EBO IE=10µA,IC=0
60
40
6
V
V
V
ICEX
IEBO
VCE=30V,VEB(off)=3V
VEB=5V,IC=0
0.05
0.1
µA
µA
Emitter cut-off current
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE=1V,IC=0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=50mA
VCE=1V,IC=100mA
40
70
DC current gain
100
60
300
30
VCE(sat)1 IC=10mA,IB=1mA
VCE(sat)2 IC=50mA,IB=5mA
VBE(sat)1 IC=10mA,IB=1mA
VBE(sat)2 IC=50mA,IB=5mA
0.2
0.3
V
V
Collector-emitter saturation voltage
0.65
300
0.85
0.95
V
Base-emitter saturation voltage
Transition frequency
V
fT
VCE=20V,IC=10mA,f=100MHz
MHz
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Collector output capacitance
Noise figure
Symbol
Test
conditions
MIN
TYP
MAX
4
UNIT
pF
Cob
NF
td
VCB=5V,IE=0,f=1MHz
VCE=5V,Ic=0.1mA,
5
dB
Delay time
35
35
200
50
nS
VCC=3V, VBE ）=-0.5V,
IC=10mA , IB1=1mA
（
off
Rise time
tr
nS
Storage time
tS
nS
V
CC=3V, IC=10mA
IB1= IB2= 1mA
Fall time
tf
nS
Typical Characteristics
MMBT3904M
D im e n s io n s In M illim e te r s
D im e n s io n s In In c h e s
S y m b o l
M in .
0 .4 5 0
0 .0 1 0
0 .1 7 0
0 .2 7 0
M a x .
0 .5 5 0
0 .0 9 0
0 .2 7 0
0 .3 7 0
M in .
0 .0 1 8
0 .0 0 0
0 .0 0 7
0 .0 1 1
M a x .
0 .0 2 2
0 .0 0 4
0 .0 1 1
0 .0 1 5
A
A 1
b
b 1
b 2
D
0 .2 5 0 R E F .
0 .0 1 0 R E F .
1 .1 5 0
1 .1 5 0
1 .2 5 0
1 .2 5 0
0 .0 4 5
0 .0 4 5
0 .0 4 9
0 .0 4 9
E
D 2
E 2
e
0 .4 7 0 R E F .
0 .8 1 0 R E F .
0 .8 0 0 T Y P .
0 .2 8 0 R E F .
0 .2 3 0 R E F .
0 .1 5 0 R E F .
0 .3 0 0 R E F .
0 .0 9 0 R E F .
0 .0 0 2 R E F .
0 .0 3 2 R E F .
0 .0 3 2 T Y P .
0 .0 1 1 R E F .
0 .0 0 9 R E F .
0 .0 0 6 R E F .
0 .0 1 2 R E F .
0 .0 0 4 R E F .
L
L 1
L 2
k
z
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