MMBTA42E [JCST]
TRANSISTOR; 晶体管
| 型号： | MMBTA42E |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR |
| 文件： | 总4页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03A Plastic-Encapsulate Transistors
MMBTA42E
TRANSISTOR
C
DESCRIPTION
NPN Epitaxial Silicon Transistor
WBFBP-03A
(1.6×1.6×0.5)
unit: mm
TOP
FEATURES
Power dissipation PCM : 0.15 W (Tamb=25℃)
B
E
E
B
APPLICATION
High Voltage Amplifier
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
C
1. BASE
2. EMITTER
3. COLLECTOR
BACK
MARKING:1D
C
1D
B E
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
IC
310
305
5
V
V
Collector Current -Continuous
Junction Temperature
Storage Temperature
300
150
mA
TJ
℃
Tstg
RӨJA
RӨJC
-55-150
200
℃
℃/W
℃/W
Thermal Resistance, junction to Ambient
Thermal Resistance, unction to Case
83.3
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
310
305
5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
IC= 100µA, IE=0
V(BR)CEO IC= 1mA, IB=0
V
V(BR)EBO
ICBO
V
IE= 100µA, IC=0
VCB=200V, IE=0
VCE=200V, IB=0
VCE=300V, IB=0
VEB= 5V, IC=0
0.25
0.25
5
µA
µA
µA
µA
Collector cut-off current
Emitter cut-off current
I CEO
IEBO
0.1
hFE(1)
hFE(2)
hFE(3)
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
60
100
75
DC current gain
200
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat) IC=20mA, IB= 2mA
VBE(sat) IC= 20mA, IB=2mA
0.2
0.9
V
V
VCE=20V, IC= 10mA
Transition frequency
50
MHz
fT
f=30MHz
MMBTA42E
D im e n s io n s In M illim e t e r s
D im e n s io n s In In c h e s
S y m b o l
M in .
0 .4 5 0
0 .0 1 0
0 .2 3 0
M a x .
0 .5 5 0
0 .0 9 0
0 .3 3 0
M in .
0 .0 1 8
0 .0 0 0
0 .0 0 9
M a x .
0 .0 2 2
0 .0 0 4
0 .0 1 3
A
A 1
b
b 1
D
E
0 .3 2 0 R E F .
0 .0 1 3 R E F .
1 .5 5 0
1 .5 5 0
1 .6 5 0
1 .6 5 0
0 .0 6 1
0 .0 6 1
0 .0 6 5
0 .0 6 5
D 2
E 2
e
0 .7 5 0 R E F .
1 .0 0 0 R E F .
1 .0 0 0 T Y P .
0 .2 8 0 R E F .
0 .2 3 0 R E F .
0 .1 8 0 R E F .
0 .2 5 0 R E F .
0 .2 0 0 R E F .
0 .3 2 0 R E F .
0 .1 6 0 R E F .
0 .0 3 0 R E F .
0 .0 4 0 R E F .
0 .0 4 0 T Y P .
0 .0 1 1 R E F .
0 .0 0 9 R E F .
0 .0 0 7 R E F .
0 .0 1 0 R E F .
0 .0 0 8 R E F .
0 .0 1 3 R E F .
0 .0 0 6 R E F .
L
L 1
L 2
L 3
L 4
k
z
相关型号：
MMBTA42LT1-TP
Small Signal Bipolar Transistor, 0.3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
MCC
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