S9012MJ [JCST]
Transistor;型号: | S9012MJ |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | Transistor |
文件: | 总3页 (文件大小:185K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
WBFBP-03B Plastic-Encapsulate Transistors
S9012M
TRANSISTOR
C
WBFBP-03B
(1.2×1.2×0.5)
unit: mm
DESCRIPTION
PNP Epitaxial Silicon Transistor
TOP
FEATURES
Complementary to S9013M
Excellent hFE linearity
B
E
1. BASE
C
2. EMITTER
3. COLLECTOR
APPLICATION
BACK
150mW Output Amplifier of Potable Radios in Class
B Push-pull Operation.
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM,Note book PC, etc.)
E
B
MARKING: 2T1
C
2T1
B E
MAXIMUM RATINGS TA=25℃ unless otherwise noted
Symbol
Parameter
Value
Units
V
VCBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
VCEO
VEBO
IC
-25
V
-5
V
Collector Current -Continuous
Collector Dissipation
-500
mA
mW
℃
PC
150
TJ
Junction Temperature
Storage Temperature
150
-55-150
Tstg
℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-40
-25
-5
V
IC= -100μA, IE=0
IC= -1mA, IB=0
V
V
IE=-100μA, IC=0
VCB=-40 V ,IE=0
-0.1
-0.1
-0.1
400
-0.6
-1.2
μA
μA
μA
Collector cut-off current
ICEO
VCE=-20V ,IB=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
DC current gain
hFE
VCE=-1V, IC=-50mA
IC=-500mA, IB= -50mA
IC=-500mA, IB= -50mA
VCE=-6V, IC= -20mA
f=30MHz
120
150
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
BE(sat)
V
V
V
Transition frequency
MHz
pF
fT
Collector output capacitance
Cob
5
VCB=-10V,IE=0,f=1MHz
CLASSIFICATION OF hFE
Rank
L
H
J
120-200
200-350
300-400
Range
Typical Characteristics
S9012M
D im e n s io n s In M illim e t e r s
D im e n s io n s In In c h e s
S y m b o l
M in .
0 .4 5 0
0 .0 1 0
0 .1 7 0
0 .2 7 0
M a x .
0 .5 5 0
0 .0 9 0
0 .2 7 0
0 .3 7 0
M in .
0 .0 1 8
0 .0 0 0
0 .0 0 7
0 .0 1 1
M a x .
0 .0 2 2
0 .0 0 4
0 .0 1 1
0 .0 1 5
A
A 1
b
b 1
b 2
D
0 .2 5 0 R E F .
0 .0 1 0 R E F .
1 .1 5 0
1 .1 5 0
1 .2 5 0
1 .2 5 0
0 .0 4 5
0 .0 4 5
0 .0 4 9
0 .0 4 9
E
D 2
E 2
e
0 .4 7 0 R E F .
0 .8 1 0 R E F .
0 .8 0 0 T Y P .
0 .2 8 0 R E F .
0 .2 3 0 R E F .
0 .1 5 0 R E F .
0 .3 0 0 R E F .
0 .1 8 0 R E F .
0 .0 0 2 R E F .
0 .0 3 2 R E F .
0 .0 3 2 T Y P .
0 .0 1 1 R E F .
0 .0 0 9 R E F .
0 .0 0 6 R E F .
0 .0 1 2 R E F .
0 .0 0 7 R E F .
L
L 1
L 2
k
z
相关型号:
S9013-AP
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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