S9014L(SOT-23) [JCST]
Transistor;型号: | S9014L(SOT-23) |
厂家: | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
描述: | Transistor |
文件: | 总1页 (文件大小:561K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
SOT-23
S9014
TRANSISTOR (NPN)
1. BASE
FEATURES
Complementary to S9015
2. EMITTER
3. COLLECTOR
z
MARKING: J6
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value
50
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
VCEO
VEBO
IC
45
V
V
5
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.1
A
PC
0.2
W
℃
℃
Tj
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 100μA, IE=0
IC= 0.1mA, IB=0
IE=100μA, IC=0
Min
50
45
5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
VCB=50 V , IE=0
VCE=35V , IB=0
VEB= 3V , IC=0
0.1
μA
μA
μA
Collector cut-off current
ICEO
0.1
0.1
Emitter cut-off current
IEBO
DC current gain
hFE
VCE=5V, IC= 1mA
IC=100 mA, IB= 5mA
IC=100 mA, IB= 5mA
200
150
1000
0.3
1
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
VCE=5V, IC= 10mA
f=30MHz
Transition frequency
fT
MHz
CLASSIFICATION OF hFE
L
H
Rank
200-450
450-1000
Range
A,Apr,2011
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