SS8050LT1L(SOT-323) [JCST]
Transistor;
| 型号： | SS8050LT1L(SOT-323) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
SS8050LT1 TRANSISTOR (NPN)
SOT-323
1. BASE
FEATURES
2. EMITTER
3. COLLECTOR
1. 25¡ À0. 05
Power dissipation
PCM:
2. 30¡ À0. 05
0.2
W (Tamb=25℃)
Collector current
ICM:
1.5
40
A
Collector-base voltage
V(BR)CBO
:
V
Unit: mm
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100µA, IE=0
Ic= 0.1mA, IB=0
MIN
40
25
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE=100µA, IC=0
VCB=40V, IE=0
0.1
0.1
0.1
350
µA
µA
µA
ICEO
VCB=20V, IE=0
Collector cut-off current
IEBO
VEB= 5V, IC=0
Emitter cut-off current
hFE(1)
VCE=1V, IC= 100mA
VCE=1V, IC= 800mA
IC=800mA, IB= 80mA
IC=800mA, IB= 80mA
120
40
DC current gain
hFE(2)
VCE(sat)
VBE(sat)
0.5
1.2
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE=10V, IC= 50mA
100
MHz
Transition frequency
fT
f=30MHz
CLASSIFICATION OF hFE
(1)
Rank
L
H
Range
120-200
200-350
DEVICE MARKING
SS8050LT1=Y1
相关型号：
SS8050LT1L-TP
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
MCC
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