SS8550LT1 [JCST]
TRANSISTOR（ PNP ）; 晶体管（ PNP ）
| 型号： | SS8550LT1 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR（ PNP ） |
| 文件： | 总2页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
SOT— 23
1. BASE
SS8550LT1
TRANSISTOR（ PNP ）
2. EMITTER
3. COLLECTOR
FEATURES
Power dissipation
PCM
Collector current
ICM
:
0.3
W（Tamb=25℃）
2.4
1.3
:
-1.5
A
V
Collector-base voltage
V(BR)CBO : -40
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
unless otherwise specified）
Parameter
Symbol
Test
conditions
MIN
-40
-25
-5
MAX
UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
Ic= -100 μA， IE=0
Ic= -0.1mA， IB=0
V
V
V
(BR)CBO
V
(BR)CEO
V
IE= -100 μA， IC=0
VCB= -40 V , IE=0
(BR)EBO
ICBO
ICEO
-0.1 μA
-0.1 μA
-0.1 μA
350
Collector cut-off current
VCE= -20 V , IB=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
hFE（1）
hFE（2）
VCE(sat)
VBE(sat)
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
IC=-800 mA, IB= -80mA
IC=-800 mA, IB= -80mA
120
40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
-0.5
-1.2
V
V
VCE= -10V, I = -50mA
C
Transition frequency
fT
100
MHz
f=30MHz
CLASSIFICATION OF hFE
(1)
Rank
L
H
Range
120-200
200-350
DEVICE MARKING
SS8550LT1=Y2
SOT-23 PACKAGE OUTLINE DIMENSIONS
D
b
0.2
e
C
e1
Dimensions In Millimeters
Symbol
Dimensions In Inches
Min
Max
Min
Max
A
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
A1
A2
b
c
D
E
E1
e
0.950TPY
0.550REF
0.037TPY
0.022REF
e1
L
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8°
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