SS9018H [JCST]
Transistor;
| 型号： | SS9018H |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
TO-92
SS9018 TRANSISTOR (NPN)
1.EMITTER
2.BASE
FEATURES
High Current Gain Bandwidth Product
3.COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
Parameter
Value Units
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
25
18
4
V
V
V
VCEO
VEBO
IC
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
50
mA
PC
RθJA
Tj
0.4
W
312.5 ℃/W
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
IC= 100μA, IE=0
IC= 0.1mA, IB=0
IE= 100μA, IC=0
VCB= 20V, IE=0
VCE=15V,IB=0
Min
25
18
4
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
0.1
0.1
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
VEB=3V, IC=0
0.1
DC current gain
hFE
VCE=5V, IC= 1mA
IC=10mA, IB=1mA
IC=10mA,IB=1mA
28
270
0.5
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
V
V
1.42
V
CE=5 V, IC=5mA
Transition frequency
1.2
GHz
fT
f =400MHz
CLASSIFICATION OF hFE
Rank
D
E
F
G
H
I
J
Ra nge
28-45
39-60
54-80
72-108
97-146
132-198
180-270
A,May,2011
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