TIP122(TO-220) [JCST]
Transistor;
| 型号： | TIP122(TO-220) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
TIP120,121,122 Darlington TRANSISTOR (NPN)
TO-220
TIP125,126,127 Darlington TRANSISTOR (PNP)
1.BASE
2.COLLECTOR
3.EMITTER
FEATURES
Medium Power Complementary silicon transistors
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
TIP120
TIP125
TIP121
TIP126
TIP122
TIP127
Units
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
60
60
80
100
100
V
V
Collector-Emitter Voltage
80
Emitter-Base Voltage
5
5
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Junction Temperature
A
PC
2
W
RθJA
RθJc
TJ
62.5
1.92
150
℃/W
℃/W
℃
Tstg
Storage Temperature
-55to+150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
V
Collector-base breakdown voltage TIP120,TIP125
TIP121,TIP126
60
80
V(BR)CBO
IC= 1mA,IE=0
TIP122,TIP127
100
60
Collector-emitter breakdown voltage TIP120,TIP125
TIP121,TIP126 VCEO(SUS) IC= 30mA,IB=0
80
V
TIP122,TIP127
100
Collector cut-off current
Collector cut-off current
TIP120,TIP125
TIP121,TIP126
TIP122,TIP127
VCB= 60 V, IE=0
ICBO
V
V
CB= 80 V, IE=0
CB= 100V, IE=0
0.2
mA
TIP120,TIP125
VCE=30 V, IB=0
TIP121,TIP126
TIP122,TIP127
ICEO
V
V
CE=40 V, IB=0
CE=50 V, IB=0
0.5
2
mA
mA
Emitter cut-off current
DC current gain
IEBO
hFE(1)
hFE(2)
VEB=5 V, IC=0
VCE= 3V, IC=0.5A
VCE= 3V, IC=3 A
1000
1000
IC=3A,IB=12mA
IC=5 A,IB=20mA
2
4
Collector-emitter saturation voltage
Base-emitter voltage
VCE(sat)
VBE
V
V
VCE=3V, IC=3 A
2.5
Output Capacitance
TIP125,TIP126,TIP127
TIP120,TIP121,TIP122
300
200
Cob
VCB=10V, IE=0,f=0.1MHz
pF
A,Mar,2011
Typical Characteristics
TIP120,121,122,125,126,127
A,Mar,2011
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