F1A [JFW]

SURFACE MOUNT FAST RECOVERY RECTIFIER; 表面装载快速恢复整流
F1A
型号: F1A
厂家: JFW INDUSTRIES, INC.    JFW INDUSTRIES, INC.
描述:

SURFACE MOUNT FAST RECOVERY RECTIFIER
表面装载快速恢复整流

快速恢复二极管
文件: 总2页 (文件大小:168K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
R
F1A~F1M  
F
A
S
T
R
E
C
O
V
E
R
Y
R
E
C
T
I
F
I
E
R
S
u
r
f
a
c
e
M
o
u
n
t
S
E
M
I
C
O
N
D
U
C
T O R  
R
e
v
e
r
s
e
V
o
l
t
a
g
e
-
5
0
t
o
1
0
0
0
V
o
l
t
s
F
o
r
w
a
r
d
C
u
r
r
e
n
t
-
1
.
0
A
m
p
e
r
e
FEATURES  
Low profile space  
Ideal for automated placement  
Glass passivated chip junctions  
Low forward voltage drop  
Low leakage current  
High forward surge capability  
High temperature soldering  
260/10 seconds at terminals  
Component in accordance to  
RoHS 2002/95/1 and WEEE 2002/96/EC  
M
E
C
H
A
N
I
C
A
L
D
A
T
A
Case: JEDEC SOD-123FL molded plastic  
body over glass passivated chip  
Terminals: Solder plated, solderable per  
J-STD-002B and JESD22-B102D  
Polarity: Laser band denotes cathode end  
M
A
X
I
M
U
M
R
A
T
I
N
G
S
A
N
D
E
L
E
C
T
R
I
C
A
L
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
(TA = 25 °C unless otherwise noted)  
Symbol F1A  
F
F1D  
F1G  
F1J  
F
1K  
F1M UNIT  
1B  
VRRM  
50  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
100  
70  
200  
140  
200  
400  
280  
400  
1
600  
420  
600  
800  
560  
800  
1000  
V
V
V
A
VRMS  
35  
700  
VDC  
50  
Maximum DC blocking voltage  
100  
1000  
IF(AV)  
IFSM  
VF  
Maximum average forward rectified current  
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load  
25  
A
V
Maximum instantaneous forwad voltage at 1.0A  
1.3  
Maximum DC reverse current  
TA = 25  
TA = 100℃  
5.0  
50  
IR  
μA  
at Rated DC blocking voltage  
Maximum reverse recovery time  
at IF = 0.5 A , IR = 1.0 A , Irr = 0.25 A  
trr  
CJ  
150  
500  
250  
nS  
p F  
Typical junction capacitance at 4.0 V ,1MHz  
15  
Operating junction and storage  
temperature range  
TJ, TSTG  
55 to +150  
J
I
N
A
N
J
I
N
G
H
E
N
G
E
L
E
C
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C
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.
,
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.
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M
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T O R  
R AT I N G S A N D C H A R A C T E R I S T I C C U R V E S  
F 1A~F 1M  
F
I
G
.
1
-
T
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P
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A
L
F
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W
A
R
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F
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.
2
-
M
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I
M
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N
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N
-
R
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P
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T
I
T
IV  
E
D
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G
C
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V
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O
R
W
A
R
D
S
U
R
G
E
C
U
R RE NT  
1.0  
0.8  
0.6  
0.4  
50  
8
.
E
3
m
s
S
C
I
N
G
L
E
H
A
L
F
S
I
N
E
-
W
A
V
E
(
J
D
E
M
e
t
h
o
d
)
40  
30  
20  
10  
0
S
R
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N
S
G
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T
P
H
E
A
O
S
R
E
H
A
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F
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6
0
H
A
Z
I
S
I
V
I
N
C
T
I
V
L
O
D
0.2  
0
0
25  
50  
75  
100  
125  
150  
175  
A
M
B
I
E
N
T
T
E
M
P
E
R
A
T
U
R
E
(
°
C
)
1
2
4
6
8
10  
20  
40  
60  
100  
N
U
M
B
E
R
O
F
C
Y
C
L
E
S
A
T
6
0
H
z
F
I
G
.
3
-
T
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P
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C
A
L
I
N
S
T
A
N
T
A
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O
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F
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W
A
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F
I
G
.
4
-
T
Y
P
I
C
A
L
R
E
V
E
R
S
E
C
H
A
R
A
C
T
E
R
I
S
T
I
C
S
10  
20  
10  
6.0  
4.0  
2.0  
3
1
1.0  
0.6  
0.4  
T
J
=
2
5
C
0.2  
0.1  
0.3  
0.1  
0.06  
0.04  
TJ=25°C  
0.02  
0.01  
P
u
l
s
e
W
i
d
t
h
=
3
0
0
µ
s
0.03  
0.01  
1
%
D
u
t
y
C
y
c
l
e
0
20  
40  
60  
80  
100  
120  
140  
0.4 0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
P
E
R
C
E
N
T
O
F
R
A
T
E
D
P
E
A
K
R
E
V
E
R
S
E
V
O
L
T
A
G
E
(
%
)
I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
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V
O
L
T
A
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E
(
V
O
L
T
S
)
F
I
G
.
6
-
T
E
S
T
C
I
R
C
U
I
T
D
I
A
G
R
A
M
A
N
D
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R
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C
O
V
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R
Y
T
I
M
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C
H
A
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A
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T
E
R
I
S
T
I
C
F
I
G
.
5
-
T
Y
P
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C
A
L
J
U
N
C
T
I
O
N
C
A
P
A
C
I
T
A
N
C
E
5
0
W
1
0
W
2
0 0  
0
N
O
N
I
N
D
U
C
T
I
V
E
N
O
N
I
N
D
U
C
T
I
V
E
t
r
r
1
0
6
4
+0.5A  
0
0
D
.
U
.
T
.
(
)
P
N
N
U
L
S
E
0
G
E
(
E
R
A
T
O
R
5
0
V
d
c
O
T
E
2
)
2
0
-0.25A  
-1.0A  
(
A
D
J
U
S
T
A
B
L
E
)
(
)
1
O
S
C
I
L
L
O
S
C
O
P
E
N
O
N
I
N
-
T
J
=
2
5
°
C
(
N
O
T
E
1
)
D
U
C
T
I
V
E
1
0
N
O
T
E
S
:
1
.
R
i
s
e
T
h
T
i
m
e
=
7
n
s
m
a
x
.
i
n
p
u
t
l
m
p
e
d
a
n
c
e
=
1
1cm  
m
e
g
o
m
2
2
p
F
S
E
T
T
I
M
E
B
A
S
E
F
O
R
5
0
/
1
0
0
n
s
/
c
m
2
.
R
i
s
e
i
m
e
=
1
0
n
s
m
a
x
.
s
o
u
r
c
e
l
m
p
e
d
a
n
c
e
0
=
5
0
o
h
m
s
0.1 0.2  
0.4  
1
2
4
10  
20  
40  
100  
R
E
V
E
R
S
E
V
O
L
T
A
G
E
.
(
V
)
J
I
N
A
N
J
I
N
G
H
E
N
G
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L
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C
T
R
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N
I
C
S
C
O
.
,
L
T
D
.
E-mail:lg0817@qq.com  

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