DTC114YSA [JCST]

Digital transistors (built-in resistors); 数字晶体管(内置电阻)
DTC114YSA
型号: DTC114YSA
厂家: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD    JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
描述:

Digital transistors (built-in resistors)
数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:117K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
Digital transistors (built-in resistors)  
DTC114YE/DTC114YUA  
/DTC114YKA/DTC114YSA/DTC114YCA  
DIGITAL TRANSISTOR (NPN)  
FEATURES  
1. Built-in bias resistors enable the configuration of an inverter circuit without  
connecting external input resistors(see equivalent circuit).  
2. The bias resistors consist of thin-film resistors with complete isolation to allow  
negative biasing of the input. They also have the advantage of almost completely  
eliminating parasitic effects.  
3. Only the on/off conditions need to be set for operation, making device design easy.  
PIN CONNENCTIONS AND MARKING  
DTC114YE  
DTC114YUA  
Addreviated symbol: 64  
SOT-523  
SOT-323  
Addreviated symbol: 64  
DTC114YCA  
DTC114YKA  
SOT-23  
SOT-23-3L  
Addreviated symbol: 64  
SOT-23  
Addreviated symbol: 64  
DTC114YSA  
TO-92S  
Absolute maximum ratings(Ta=25)  
Limits (DTC114Y)  
Parameter  
Symbol  
Unit  
E
UA  
KA  
CA  
SA  
Supply voltage  
VCC  
VIN  
50  
V
V
Input voltage  
-6to+40  
70  
IO  
mA  
mA  
mW  
Output current  
IC(Max.)  
PC  
100  
Power dissipation  
150  
200  
300  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55 to+ 150  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
VCC=5V ,IO=100µA  
VO=0.3V ,IO=1mA  
IO/II=5mA/0.25mA  
VI=5V  
0.3  
Input voltage  
V
1.4  
Output voltage  
Input current  
0.3  
0.88  
0.5  
V
mA  
µA  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
IO(off)  
GI  
VCC=50V ,VI=0  
VO=5V ,IO=5mA  
68  
7
R1  
10  
4.7  
250  
13  
K  
R2/R1  
fT  
3.7  
5.7  
MHz  
Vo=10V ,Io=5mA,f=100MHz  
Typical Characteristics  

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