ACJT1235-10A [JIEJIE]
12A TRIACs;
| 型号： | ACJT1235-10A |
| 厂家： | 
JIEJIE MICROELECTRONICS CO.,Ltd |
| 描述： | 12A TRIACs 三端双向交流开关 |
| 文件： | 总5页 (文件大小：358K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIEJIE MICROELECTRONICS CO. , Ltd
ACJT12 Series 12A TRIACs
Rev.3.0
DESCRIPTION:
The ACJT12 series of double mesa technology provide high
interference immunity, They can be used as an static ON/OFF
function in electrical control system, and used as a driver of
low power and high inductance or resistive loads, such as
jet pumps of dishwashers, fans of air-conditioner ...
1
2
1
3
2
3
TO-220A
Insulated
TO-220B
Non-Insulated
ACJT12xx-xxA provides insulation voltage rated at 2500V
RMS and ACJT12xx-xxF provides insulation voltage rated at
2000V RMS from all three terminals to external heatsink.
1
2
3
MAIN FEATURES
TO-220F
Insulated
Symbol
IT(RMS)
Value
12
Unit
A
T1(1)
T2(2)
VDRM /VRRM
IGT
1000
V
G(3)
≤10 or ≤35 or ≤50
mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
Unit
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage( Tj=25℃)
Repetitive peak reverse voltage( Tj=25℃)
Non repetitive surge peak Off-state voltage
-40-150
-40-125
1000
℃
℃
V
Tj
VDRM
VRRM
VDSM
VRSM
1000
V
VDRM +100
VRRM +100
V
Non repetitive peak reverse voltage
TO-220A(Ins)/
V
TO-220F(Ins) (TC=92℃)
TO-220B(Non-Ins)
(TC=103℃)
RMS on-state
current
IT(RMS)
12
A
Non repetitive surge peak on-state current
(full cycle, F=50Hz)
ITSM
120
A
I2t value for fusing ( tp=10ms)
I2t
72
50
A2s
Rate of rise of on-state current (IG=2×IGT)
dIT/dt
A/μs
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ACJT12 Series
JieJie Microelectronics CO. , Ltd
Peak gate current
IGM
PG(AV)
PGM
4
1
5
A
Average gate power dissipation
Peak gate power
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Quadrant
Unit
ACJT1210 ACJT1235 ACJT1250
MAX
MAX
IGT
Ⅰ-Ⅱ-Ⅲ
Ⅰ-Ⅱ-Ⅲ
10
35
50
mA
V
VD=12V RL=33Ω
VGT
1.5
VD=VDRM Tj=125℃
RL=3.3KΩ
MIN
VGD
Ⅰ-Ⅱ-Ⅲ
0.2
V
Ⅰ-Ⅲ
20
30
15
50
70
45
70
100
60
MAX
IL
mA
IG=1.2IGT
Ⅱ
MAX
MIN
IH
IT=100mA
mA
VD=2/3VDRM Gate Open
Tj=125℃
dV/dt
1000
1500
2000
V/μs
STATIC CHARACTERISTICS
Symbol
Parameter
Value(MAX)
Unit
V
VTM
IDRM
IRRM
ITM=17A tp=380μs
Tj=25℃
Tj=25℃
Tj=125℃
1.65
10
μA
mA
VD=VDRM VR=VRRM
3.0
THERMAL RESISTANCES
Symbol
Parameter
Value
4.0
Unit
TO-220A(Ins)/
TO-220F(Ins)
Rth(j-c)
junction to case(AC)
℃/W
TO-220B(Non-Ins)
2.8
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ACJT12 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
AC J T 12 35 -10 F
A:TO-220A(Ins)
F:TO-220F(Ins)
B:TO-220B(Non-Ins)
AC switch
JieJie Microelectronics Co.,Ltd
Triacs
10:VDRM /VRRM≥1000V
10: IGT1-3≤10mA
IT(RMS):12A
35: IGT1-3≤35mA
50: IGT1-3≤50mA
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Inches
Typ.
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.80
6.55
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.95
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.386
0.258
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.274
A
B
E
A
C2
C
C2
C3
D
E
C3
C
F
L2
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
B
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
45°
45°
TO-220A Ins
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ACJT12 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.60
6.20
Max.
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.60
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.378
0.244
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.260
A
B
E
A
C2
C
C2
C3
D
E
JIE
C3
C
F
L2
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
B
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
45°
45°
TO-220B Non-Ins
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.74
0.48
2.40
2.60
8.80
9.70
6.40
Max.
Min.
0.173
0.029
0.019
0.094
0.102
0.346
0.382
0.252
Max.
.5mm
A
4.80
0.83
0.75
2.70
3.00
9.30
10.3
7.00
0.189
A
B
Max 3
E
C2
Φ
0.80
0.031 0.033
0.030
0.106
0.118
0.366
0.406
0.276
0.1
C
C2
C3
D
E
C3
F
L2
2.54
3.63
G
28.0
1.14
29.8
1.70
H
1.102
0.045
1.173
0.143
0.067
0.130
45°
L1
L2
L3
V1
B
C
G
3.30
45°
TO-220F Ins
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ACJT12 Series
FIG.1 Maximum power dissipation versus RMS
JieJie Microelectronics CO. , Ltd
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
18
P(w)
18
α=180°
15
12
9
15
TO-220B
(Non-Ins)
12
TO-220A(Ins)/
TO-220F(Ins)
9
6
3
6
3
IT(RMS) (A)
Tc (℃)
0
0
0
0
3
6
9
12
15
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
40
ITSM (A)
150
120
100
80
t=20ms
One cycle
30
20
60
Tj=25℃
40
10
0
Tj=125℃
20
0
VTM (V)
Number of cycles
100
0
0.5
1.0
1.5
2.0
2.5
1
10
1000
FIG.6: Relative variations of holding current,
latching curretn versus junction temperature
FIG.5: Relative variations of gate trigger current
versus junction temperature
IH,IL(Tj) /IH,IL(Tj=25℃)
IGT(Tj) /IGT(Tj=25℃)
3.0
3.0
2.5
2.0
2.5
2.0
IH
IGT3
IGT1&IGT2
IL
1.5
1.0
1.5
1.0
0.5
0.0
0.5
0.0
Tj (℃)
40 60
Tj (℃)
40 60
-40 -20
0
20
80 100 120 140
-40 -20
0
20
80 100 120 140
Information furnished in this document is believed to be accurate and reliable. However, Jiangsu
JieJie Microelectronics Co.,Ltd assumes no responsibility for the consequences of use without
consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart from that when
an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents. Jiangsu
JieJie assumes no responsibility for any infringement of other rights of third parties which may
result from the use of such products and information.
This document is the third version which is made in 12-June-2015. This document supersedes
and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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