JCT1240 [JIEJIE]
40A SCRs;
| 型号： | JCT1240 |
| 厂家： | 
JIEJIE MICROELECTRONICS CO.,Ltd |
| 描述： | 40A SCRs |
| 文件： | 总5页 (文件大小：392K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIEJIE MICROELECTRONICS CO. , Ltd
JCT1240 Series 40A SCRs
Rev.3.0
DESCRIPTION:
JCT1240 series of silicon controlled rectifiers, with
high ability to withstand the shock loading of large
current, provide high dv/dt rate with strong resistance
to electromagnetic interference. They are especially
recommended for use on solid state relay, motorcycle,
power charger, T-tools etc.
1
2
1
3
2
3
TO-220A
Insulated
TO-3P
Insulated
1
2
3
JCT1240A provides insulation voltage rated at 2500V
RMS and JCT1240Z provides insulation voltage rated
at 2000V RMS from all three terminals to external
heatsink. JCT1240A and JCT1240Z series comply
with UL standards (File ref: E252906).
TO-247
A(2)
K(1)
G(3)
MAIN FEATURES
Symbol
VDRM/ VRRM
IT(RMS)
JCT1240
1200V
40A
IGT
≤ 35mA
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Tstg
Value
Unit
℃
℃
V
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage(Tj=25℃)
Repetitive peak reverse voltage(Tj=25℃)
Non repetitive surge peak Off-state voltage
Non repetitive peak reverse voltage
TO-3P(Ins) (TC=80℃)
-40-150
-40-125
1200
Tj
VDRM
VRRM
VDSM
VRSM
1200
V
VDRM +100
VRRM +100
V
V
RMS on-state
TO-220A(Ins) (TC=85℃)
current
IT(RMS)
40
A
TO-247 (TC=90℃)
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JCT1240 Series
JieJie Microelectronics CO. , Ltd
Non repetitive surge peak on-state current
(tp=10ms)
I2t value for fusing (tp=10ms)
ITSM
I2t
460
1060
50
A
A2s
A/μs
Critical rate of rise of on-state current
(IG=2×IGT)
dI/dt
Peak gate current
IGM
PG(AV)
PGM
4
1
5
A
Average gate power dissipation
Peak gate power
W
W
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified)
Value
Symbol
Test Condition
Unit
MIN.
TYP.
MAX.
35
1.5
-
IGT
VGT
VGD
IL
-
15
-
mA
V
VD=12V RL=33Ω
-
0.2
-
VD=VDRM Tj=125℃ RL=3.3KΩ
IG=1.2IGT
-
V
-
150
75
-
mA
mA
V/μs
IH
IT=500mA
-
-
dV/dt
VD=2/3VDRM Gate Open Tj=125℃
1000
-
STATIC CHARACTERISTICS
Symbol
Parameter
ITM=80A tp=380μs
Value(MAX)
Unit
V
VTM
IDRM
IRRM
Tj=25℃
Tj=25℃
Tj=125℃
1.6
10
4
μA
mA
VD=VDRM VR=VRRM
THERMAL RESISTANCES
Symbol
Parameter
Value
1.1
Unit
TO-3P(Ins)
TO-220A(Ins)
TO-247
Rth(j-c)
junction to case(AC)
1.3
℃/W
0.95
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JCT1240 Series
JieJie Microelectronics CO. , Ltd
ORDERING INFORMATION
J CT 12 40 A
A:TO-220A(Ins)
Z:TO-3P(Ins) S:TO-247
JieJie Microelectronics Co.,Ltd
IT(RMS):40A
SCRs
12:VDRM /VRRM ≥1200V
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
0.61
0.46
1.21
2.40
8.60
9.80
6.55
Max.
Min.
0.173
0.024
0.018
0.048
0.094
0.339
0.386
0.258
Max.
0.181
0.035
0.028
0.052
0.107
0.382
0.409
0.274
.8mm
x 3
4.60
0.88
0.70
1.32
2.72
9.70
10.4
6.95
A
B
E
A
Ma
Φ
C2
C
C2
C3
D
E
C3
C
F
L2
2.54
3.75
0.1
G
28.0
29.8
H
1.102
1.173
0.148
L1
L2
L3
V1
B
1.14
2.65
1.70
2.95
0.045
0.104
0.067
0.116
G
45°
45°
TO-220A Ins
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JCT1240 Series
JieJie Microelectronics CO. , Ltd
PACKAGE MECHANICAL DATA
Dimensions
Ref.
Millimeters
Typ.
Inches
Typ.
Min.
4.40
1.45
14.35
0.50
2.70
15.80
20.40
15.10
5.40
1.10
1.35
2.80
Max.
4.60
1.55
Min.
0.173
0.057
Max.
0.181
0.061
0.614
0.028
0.114
0.650
0.831
0.610
0.222
0.055
0.059
0.118
H
A
B
A
B
C
D
E
F
G
H
J
15.60 0.565
0.70
2.90
0.020
0.106
16.50 0.622
21.10 0.803
15.50 0.594
E
L
5.65
1.40
1.50
3.00
0.213
0.043
0.053
0.110
K
L
K
P
R
J
D
4.35
0.171
TO-3P Ins
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JCT1240 Series
FIG.1 Maximum power dissipation versus RMS
JieJie Microelectronics CO. , Ltd
FIG.2: RMS on-state current versus case
on-state current
temperature
IT(RMS) (A)
60
P(w)
60
α=180°
50
50
40
TO-220A(Ins)
40
TO-247
30
30
20
10
TO-3P(Ins)
20
10
IT(RMS) (A)
Tc (℃)
0
0
0
0
10
20
30
40
50
25
50
75
100
125
FIG.3: Surge peak on-state current versus
FIG.4: On-state characteristics (maximum
number of cycles
values)
ITM (A)
500
ITSM (A)
490
420
350
tp=10ms
One cycle
Tj=125℃
100
10
1
280
210
140
70
0
Tj=25℃
VTM (V)
Number of cycles
100
0
1
2
3
4
5
1
10
1000
FIG.5: Non-repetitive surge peak on-state current
FIG.6: Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
for a sinusoidal pulse with width tp<10ms, and
2
corresponging value of I t (dI/dt < 50A/μs)
2
ITSM (A), I2t (A s)
IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃)
3.0
5000
ITSM
2.5
2.0
I2t
1000
100
10
IGT
IH&IL
1.5
1.0
0.5
0.0
dI/dt
Tj(℃)
40 60
tp(ms)
-40 -20
0
20
80 100 120 140
0.01
0.1
1
10
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the third version which is made in 4-June-2015. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright © 2015 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
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