1N757 [JINANJINGHENG]
0.5W SILICON PLANAR ZENER DIODES; 0.5W硅平面齐纳二极管
| 型号： | 1N757 |
| 厂家： | 
JINAN JINGHENG (GROUP) CO.,LTD |
| 描述： | 0.5W SILICON PLANAR ZENER DIODES |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R
0.5W SILICON PLANAR ZENER DIODES
S
E M I C O N D U C T O R
DO-35
FEATURES
Silic on p la na r p owe r ze ne r d iod e s
Sta nd a rd s ze ne r volta g e tole ra nc e is + 10%.Ad d suffix "A" for+ 5%
tole ra nc e , othe r tole ra nc e s a re a va ila ble up on re q ue st
1.083(27.5)
MIN
0.079(2.0)
MAX
DIA
0.150(3.8)
MAX
MECHANICAL DATA
:
Case DO-35 g la ss c a se
1.083(27.5)
MIN
:
Polarity Color b a nd d e note s c a thod e e nd
0.020(0.52)
MAX
DIA
:
Weight App rox. 0.13 g ra m
Dime nsions in inc he s a nd (millime te rs)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES)
A
(T = 25 C)
Ze ne r c urre nt se e ta b le "Cha ra c te ristic s"
Powe r d issip a tion a t T
Junc tion te mp e ra ture
Stora g e te mp e ra ture ra ng e
1) Va lid p rovid e d tha t a d ista nc e of 8mm from c a se a re ke p t a t a mb ie nt te mp e ra ture
A
= 50 C
P
tot
5001)
175
mW
C
C
T
J
-65 to+ 175
T
STG
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
3001)
1.5
R
JA
The rma l re sista nc e junc tion to a mb ie nt a ir
Forwa rd volta g e a t I = 200mA
1) Va lid p rovid e d tha t a d ista nc e of 8mm from c a se a re ke p t a t a mb ie nt te mp e ra ture
C/W
F
V
F
13-2
Ze ne r Volta ge Ra nge 1)
2)
VZ
IZT
TA= 25 C
TA= 150 C
V
mA
%/ C
A
mA
110
100
95
A
1N746
1N747
1N748
1N749
1N750
1N751
3.3
3.6
3.9
4.3
28
24
23
22
19
17
-0.062
-0.055
-0.049
-0.036
10
30
85
2
1
4.7
5.1
-0.018
75
70
-0.008
20
+ 0.006
1N752
1N753
1N754
1N755
1N756
1N757
1N758
1N759
5.6
6.2
11
7
65
60
55
50
45
40
35
30
+ 0.022
+ 0.035
+ 0.045
+ 0.052
+ 0.056
+ 0.060
+ 0.060
6.8
5
20
7.5
6
0.1
8.2
8
9.1
10
17
30
10.0
12.0
1)Te ste d with p ulse s tp = 20ms
2) Va lid p rovid e d tha t le a d s a re ke p t a t a mb ie nt te mp e ra ture a t a d ista nc e of 8mm from c a se .
13-3
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