MCLDB3 [JINANJINGHENG]
SILICON BIDIRECTIONAL DIAC; 硅双向DIAC
| 型号： | MCLDB3 |
| 厂家： | 
JINAN JINGHENG (GROUP) CO.,LTD |
| 描述： | SILICON BIDIRECTIONAL DIAC |
| 文件： | 总2页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MCLDB3/MCLDC34/MCLDB4/MCLDB6
SILICON BIDIRECTIONAL DIAC
S
E M I C O N D U C T O R
FEATURES
The three layer, two terminal, axial lead, hermetically sealed diacs are
designed specifically for triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse current, The breakover
symmetry is within three volts(DB3,DC34,DB4) or four volts(DB6). These diacs are
intended for use in thyrisitors phase control , circuits for lamp dimming, universal
motor speed control ,and heat control.
Micro-MELF
JF's DB3/DC34/DB4/DB6 are bi-directional trigged diode designed to operate
in conjunction with Triacs and SCR's
MECHANICAL DATA
Case: Micro-MELF glass case
Weight: Approx. 0.03 gram
Dimensions in inches and (millimeters)
ABSOLUTE RATINGS(LIMITING VALUES)
Value
Parameters
Symbols
Units
MCLDB3
MCLDC34 MCLDB4 MCLDB6
150
Power Dissipation on Printed
Circuit(L=10mm)
P
C
mW
TA=50 C
Repetitive Peak on-state
Current
tp=10ms
F=100Hz
I
TRM
2.0
-40 to+125/-40 to 110
16
2.0
2.0
A
Storage and Operating Junction Temperature
C
T
STG/T
J
ELECTRICAL CHARACTERISTICS
Value
Units
Symbols
Parameters
Test Condition
MCLDC34 MCLDB4
MCLDB6
MCLDB3
Min
Typ
Max
35
30
40
34
28
32
36
56
60
70
C=22nF(Note 2)
See diagram 1
V
VBO
Breakover Voltage (Note 2 )
Breakover Voltage Symmetry
45
38
C=22nF(Note 2)
See diagram 1
I +VBO I-
I - VBO I
+4
Max
Min
+3
V
V
I=(IBO to IF=10mA)
See Diagram 1
I + V I
VO
10
Dynamic Breakover Voltage (Note1)
Output Voltage (Note 1 )
Breakover Current (Note1)
Rise Time (Note1)
5
5
See Diagram 2
C=22nF(Note 2)
Min
Max
Typ
V
100
1.5
mA
mS
IBO
See Diagram 3
tr
VB=0.5 VBO max
see diagram 1
IB
Leakage Current (Note1)
Max
10
mA
Notes: 1.Electrical characteristics applicable in both forward and reverse directions.
2.Connected in parallel with the devices.
3-6
NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096
WWW.JIFUSEMICON.COM
JINAN JINGHENG CO., LTD.
RATINGS AND CHARACTERISTIC CURVES MCLDB3/MCLDC34/MCLDB4/MCLDB6
DIAGRAM 1: Current-voltage characteristics
DIAGRAM 2: Test circuit for output voltage
+IF
10KW
500KW
D.U.T
220V
50Hz
R=20W
VO
10mA
0.1mF
DIAGRAM 3: Test circuit see diagram2 adjust R for
IP=0.5A
IBO
IB
-V
+V
0.5 VBO
V
IP
90%
VBO
10%
-IF
tr
FIG.1-Power dissipation versus ambient
temperature (maximum values)
FIG.2-Relative variation of VBO versus junction
temperature(typical values)
P (mW)
VBO(TJ)
VBO(TJ=25 C)
Tamb( C)
FIG.3-Peak pulse current versus pulse duration
(maximum values)
ITRM(A)
F=100Hz
TJ initial=25 C
tp(ms)
3-7
NO.51 HEPING ROAD PR CHINA TEL:86-531-6943657 FAX:86-531-6947096
WWW.JIFUSEMICON.COM
JINAN JINGHENG CO., LTD.
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