MURS1560 [JINANJINGHENG]

POLYIMIDE PASSIVATED SUPER FAST RECTIFIER;
MURS1560
型号: MURS1560
厂家: JINAN JINGHENG (GROUP) CO.,LTD    JINAN JINGHENG (GROUP) CO.,LTD
描述:

POLYIMIDE PASSIVATED SUPER FAST RECTIFIER

文件: 总6页 (文件大小:660K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
R
MURS1560 MURFS1560  
POLYIMIDE PASSIVATED SUPER FAST RECTIFIER  
Reverse Voltage - 600 Volts  
Forward Current - 15.0Amperes  
S
E M I C O N D U C T O R  
TO-220AC  
2
FEATURES  
Base cathode  
2
Plastic package has Underwriters Laboratory Flammability Classification 94V-0  
Ultrafast Recovery Characteristics  
JF  
MURS1560  
Low forward voltage drop  
Low Reverse Leakage Current  
Pb  
Soft Recovery Characteristics  
High temperature soldering guaranteed:260°C/10 seconds,  
0.25"(6.35mm)from case  
1
3
RoHS  
COMPLIANT  
Anode  
1
3
Cathode  
Component in accordance to RoHS 2011/65/EU  
ITO-220AC  
JF  
MURFS1560  
MECHANICAL DATA  
1
3
Case: JEDEC TO-220AC ITO-220AC molded plastic body  
Terminals: Lead solderable per MIL-STD-750,method 2026  
Polarity: As marked  
Anode  
Cathode  
1
3
Mounting Position: Any  
PRIMARY CHARACTERISTICS  
IF(AV)  
VR  
15.0A  
600V  
150A  
1.40V  
24ns  
TYPICAL APPLICATIONS  
Anti-Parallel Diode  
-Switching Power Supply  
-Inverters  
IFSM  
VF at IF=15.0A,125  
Trr typ  
Free wheeling Diode  
-Motor Controller  
-Converters  
-Inverters  
PFC  
TJMAX  
175℃  
Diode variation  
Sigle die  
Snubber,Clamp diode  
MAXIMUM RATINGS  
(Ratings at 25ambient temperature unless otherwise specified )  
Parameter  
Unit  
V
Symbol  
Value  
600  
Maximum repetitive peak reverse voltage  
VRRM  
IF(AV)  
IFSM  
A
A
Maximum average forward rectified current  
15.0  
150  
Peak forward surge current 8.3ms single half  
sine-wave superimposed on rated load  
(JEDEC method at rated TL)  
-55 to+175  
-55 to+175  
Operating junction temperature range  
Storage temperature range  
T
J
Tstg  
6-1  
JINAN JINGHENG ELECTRONICS CO., LTD.  
HTTP://WWW.JINGHENG.CN  
RATINGS AND CHARACTERISTIC OF MURS1560\MURFS1560  
ELECTRICAL CHARACTERISTCSTJ=25Unless otherwise noted)  
Test Conditions  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Breakdown voltage  
Blocking voltage  
VBR  
VR  
600  
IR=200μA  
-
-
IF=1.0A  
1.10  
1.70  
1.90  
0.65  
1.00  
1.40  
-
-
2.50  
-
-
-
-
-
-
-
T
J
=25℃  
IF=5.0A  
IF=15.0A  
IF=1.0A  
IF=5.0A  
IF=15.0A  
VF1)  
V
Instaneous forward voltage  
T =125℃  
J
-
-
T =25℃  
J
-
μA  
10  
2.0  
30  
IR2)  
VR=600V  
150  
T
J
J
=100℃  
=125℃  
ReVerse Current  
-
-
μA  
T
100  
75  
500  
pF  
4V,1MHz  
CJ  
-
Junction capacitance  
-
Notes: 1.Pulse test: 300 μs pulse width,1% duty cycle  
2.Pulse test: pulse width40ms  
DYNAMIC RECOVERY CHARACTERISTCSTJ=25Unless otherwise noted)  
Test Conditions  
IF=0.5A,IR=1.0A, Irr=0.25A  
TJ=25℃  
Parameter  
Symbol  
trr  
Min.  
Typ.  
Max.  
Unit  
35  
-
-
-
-
24  
38  
Reverse recovery time  
ns  
TJ=125℃  
57  
-
IF=7.5A  
TJ=25℃  
TJ=125℃  
TJ=25℃  
TJ=125℃  
2.8  
4.6  
-
-
-
-
Peak recovery current  
dIF/dt=200A/μS  
VR=400V  
IRRM  
A
50  
-
-
-
-
Reverse recovery charge  
nc  
Qrr  
105  
6-2  
JINAN JINGHENG ELECTRONICS CO., LTD.  
HTTP://WWW.JINGHENG.CN  
RATINGS AND CHARACTERISTIC OF MURS1560\MURFS1560  
THERMAL CHARACTERISTCS  
Parameter  
Symbol  
TO-220AC  
2.5  
ITO-220ABC  
4.5  
Unit  
3)  
R
JC  
Typical thermal resistance  
/W  
3.Thermal resistance from junction to case  
AVAILABALE PACK INFORMATION  
Quantity(pcs/box)  
Quantity(box/carton)  
Box Size L×W×H(mm)  
Carton SizeL×W×H(mm)  
Product code  
Pack  
MURS1560-TO-220AC  
MURFS1560-ITO-220AC  
P/T  
P/T  
558×148×38  
558×148×38  
1000  
1000  
565×225×170  
565×225×170  
5
5
Equivalent circuits for power loss calculation  
VF0  
rd  
Vf0: threshold voltage  
1.15V  
rd: Dynamic resistance 0.06Ω  
Forward power loss of diode=VF0×IF(AV)+rd×I2F(RMS)  
FIG.1-FORWARD CURRENT DERATING CURVE  
FIG.2-MAXIMUM NON-REPETITIVE PEAK  
FORWARD SURGE CURRENT  
16  
14  
180  
TJ=TJMAX  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
150  
MURS1560  
12  
120  
90  
10  
8.0  
60  
MURFS1560  
6.0  
30  
4.0  
RESISTIVE OR INDUCTIVE LOAD  
0
1
10  
NUMBER OF CYCLES AT 60Hz  
100  
2.0  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
CASE TEMPERATURE ( )  
6-3  
JINAN JINGHENG ELECTRONICS CO., LTD.  
HTTP://WWW.JINGHENG.CN  
RATINGS AND CHARACTERISTIC OF MURS1260\MURFS1260  
FIG.3-TYPICAL INSTANTANEOUS FORWARD  
FIG.4-TYPICAL REVERSE CHARACTERISTICS  
CHARACTERISTICS  
2000  
1000  
TJ=150°C  
TJ=125°C  
100  
10  
TJ=100°C  
TJ=25°C  
1
0.1  
0
20  
40  
60  
80  
100  
PERCENT OF RATED PEAK REVERSE VOLTAGE%  
FIG.5-TYPICAL JUNCTION CAPACITANCE  
TYPICAL trr,ta,tb vs. FORWARD CURRENT  
FIG.6-  
50  
400  
T
J
=25,dIF/dt=100A/μS  
40  
30  
20  
10  
trr  
100  
ta  
tb  
10  
0.5  
1.0  
5.0  
10  
15  
0.1  
1
10  
100  
FORWARD CURRENT IF. AMPS  
REVERSE VOLTAGE. VOLTS  
TYPICAL trr,ta,tb vs. FORWARD CURRENT  
FIG.7-  
100  
T
J
=100,dIF/dt=100A/μS  
80  
60  
40  
20  
trr  
ta  
tb  
0.5  
1.0  
5.0  
10  
15  
FORWARD CURRENT IF. AMPS  
6-4  
JINAN JINGHENG ELECTRONICS CO., LTD.  
HTTP://WWW.JINGHENG.CN  
RATINGS AND CHARACTERISTIC OF MURS1260\MURFS1260  
(3)  
trr  
I
F
ta  
tb  
0
(4)  
Qrr  
0.25IRRM  
(2)  
I
RRM  
(5)  
dI(rec)/dt  
0.90IRRM  
dIF/dt  
(1)  
(1) dIF/dt-rate of change of current through zero crossing  
(2) IRRM-peak reverse recovery current  
(3) trr- reverse recovery time measured from zero crossing point of negative going IF to point  
where a line passing through 0.90IRRM and 0.25IRRM extrapolated to zero current  
(4) Qrr- aera under curve defined by trr and IRRM  
t
rr×IRRM  
2
Qrr=  
(5)dI(REC)/d  
t
-peak rate of change of current during tb portion of trr  
Fig.8 - Reverse Recovery Waveform and Denitions  
6-5  
JINAN JINGHENG ELECTRONICS CO., LTD.  
HTTP://WWW.JINGHENG.CN  
PACKAGE OUTLINE DIMENSIONS  
TO-220AC  
ITO-220AC  
A
A1  
A
ΦP  
ΦP  
E
E
A1  
A2  
L
A2  
C
b2  
L
b
b2  
b
C
e1  
e1  
millimeter  
Typ.  
inchs  
Typ.  
millimeter  
Typ.  
inchs  
Typ.  
Symbol  
Symbol  
Min.  
MAX  
Min.  
MAX  
Min.  
MAX  
Min.  
MAX  
A
A1  
A2  
A
A1  
A2  
4.44  
1.14  
2.50  
4.70  
1.39  
2.90  
0.175  
0.045  
0.098  
0.185  
0.055  
0.114  
4.49  
2.28  
2.50  
4.89  
2.88  
2.90  
0.177  
0.090  
0.098  
0.192  
0.133  
0.114  
b
b2  
b
b2  
0.94  
1.34  
0.93  
1.43  
0.68  
1.20  
0.027  
0.047  
0.037  
0.053  
0.67  
1.10  
0.026  
0.043  
0.037  
0.056  
C
D
C
D
0.35  
28.10  
0.58  
29.50  
0.014  
1.106  
0.37  
15.40  
0.63  
15.60  
0.015  
0.606  
0.023  
1.161  
0.025  
0.646  
E
e1  
H1  
9.85  
4.88  
6.20  
0.388  
0.192  
0.244  
0.410  
0.208  
0.283  
E
e1  
H1  
9.91  
4.88  
6.45  
0.390  
0.192  
0.254  
0.410  
0.208  
0.270  
10.42  
5.28  
7.20  
10.41  
5.28  
6.85  
0.512  
0.140  
-
0.492  
0.096  
0.000  
13.00  
3.55  
-
0.560  
0.159  
-
12.50  
2.45  
0.00  
0.531  
0.136  
0.059  
L
L1  
L2  
14.22  
4.05  
-
L
L1  
L2  
13.50  
3.45  
1.50  
3.74  
2.60  
4.10  
2.88  
0.147  
0.102  
0.161  
0.113  
ΦP  
Q
3.15  
3.05  
3.45  
3.45  
0.124  
0.120  
0.136  
0.136  
ΦP  
Q
6-6  
JINAN JINGHENG ELECTRONICS CO., LTD.  
HTTP://WWW.JINGHENG.CN  

相关型号:

MURS160

1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
DIODES

MURS160

Ultra Plastic Rectifers
GOOD-ARK

MURS160

1.0A Sintered Glass Passivated Ultra Fast Recovery Rectifier
TAITRON

MURS160

Surface Mount Ultrafast Plastic Rectifier
VISHAY

MURS160

ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE:50 TO 600V CURRENT: 1.0A
GULFSEMI

MURS160

ULTRAFAST RECTIFIER VOLTAGE RANGE 200 to 600 Volts CURRENT 1.0 Ampere
RECTRON

MURS160

SURFACE MOUNT ULTRA FAST RECTIFIERS
SYNSEMI

MURS160

Surface Mount Rectifiers
LGE

MURS160

1A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER
FRONTIER

MURS160

1.0A patch fast recovery diode 600V SMB series
SUNMATE

MURS160-13

1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
DIODES

MURS160-13-F

1.0A SURFACE MOUNT SUPER-FAST RECTIFIER
DIODES