2N6354 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N6354 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：42K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2N6354
DESCRIPTION
·With TO-3 package
·Excellent safe operating area
·Fast switching speed
·Low collector saturation voltage
·High power dissipation
APPLICATIONS
·For switching applications in military
and industrial equipment
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
150
120
6.5
UNIT
V
Open base
V
Open collector
V
10
A
ICM
Collector current-peak
Base current
12
A
IB
5
A
PD
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
140
200
-65~200
W
℃
℃
Tj
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.25
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2N6354
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat-1
VCEsat-2
VBE sat-1
VBE sat-2
ICEO
PARAMETER
Collector-emitter breakdwon voltage
Emitter-base breakdwon voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
120
6.5
TYP.
MAX
UNIT
V
IC=0.2A ;IB=0
IE=5m A ;IC=0
IC=5A ;IB=0.5A
IC=10A; IB=1A
IC=5A ;IB=0.5A
IC=10A; IB=1A
V
0.5
1.0
1.3
2.0
10
V
V
V
V
VCE=100V;VBE=0
TC=125℃
mA
mA
mA
mA
10
20
ICEV
Collector cut-off current
VCE=140V; IB=0
VCB=150V; IE=0
VEB=5V; IC=0
ICBO
Collector cut-off current
5
IEBO
Emitter cut-off current
5
hFE-1
DC current gain
IC=5A ; VCE=2V
IC=10A ; VCE=2V
20
10
150
100
hFE-2
DC current gain
2
JMnic
Product Specification
Silicon NPN Power Transistors
2N6354
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
相关型号：
2N6354E3
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
MICROSEMI
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