2SA1006 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1006 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总5页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
DESCRIPTION
·With TO-220 package
·Complement to type 2SC2336,
2SC2336A,2SC2336B
APPLICATIONS
·Audio frequency power amplifier
·High frequency power amplifier
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220) and symbol
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
-180
-200
-250
-180
-200
-250
-5
UNIT
2SA1006
VCBO
Open emitter
V
2SA1006A
2SA1006B
2SA1006
Collector-base voltage
VCEO
Open base
V
2SA1006A
2SA1006B
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
-1.5
ICM
Collector current-Peak
-3.0
Ta=25℃
TC=25℃
1.5
PT
Total power dissipation
W
25
Tj
Junction temperature
Storage temperature
150
℃
℃
Tstg
-55~150
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
-1.0
-1.5
-1
UNIT
V
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-0.5A ;IB=-50mA
VCB=-150V ;IE=0
V
μA
μA
IEBO
VEB=-3V; IC=0
-1
hFE-1
hFE-2
Cob
IC=-5mA ; VCE=-5V
IC=-150mA ; VCE=-5V
IE=0 ; VCB=-10V,f=1MHz
IC=-100mA ; VCE=10V
30
60
DC current gain
320
Output capacitance
Transition frequency
45
80
pF
fT
MHz
hFE-2 Classifications
R
Q
P
60-120
100-200
160-320
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
4
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1006 2SA1006A 2SA1006B
5
相关型号：
2SA1006AP
Power Bipolar Transistor, 1.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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2SA1006AQ
Power Bipolar Transistor, 1.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
NEC
2SA1006BP
Power Bipolar Transistor, 1.5A I(C), 250V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
NEC
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