2SC1875 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC1875 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors 局域网 晶体管 |
| 文件： | 总3页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1875
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Designed for use in large screen color
deflection circuits
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1500
500
6
UNIT
V
Open base
V
Open collector
V
3.5
A
ICM
Collector current-peak
Base current
10
A
IB
1.0
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance junction case
MAX
UNIT
Rth j-C
2.5
℃/W
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1875
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
ICES
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=100mA ;IB=0
500
IC=2.5A; IB=0.6A
IC=2.5A; IB=0.6A
VCE=1500V; VBE=0
VCB=1000V; IE=0
VEB=5V; IC=0
10
1.2
1.0
20
20
35
25
V
V
mA
μA
μA
ICBO
IEBO
hFE-1
hFE-2
ts
IC=0.5A ; VCE=10V
IC=2A ; VCE=10V
10
5
DC current gain
Storage time
10
μs
μs
IC=2.5A ; IB1=-IB2=0.6A
Pw=20μs
tf
Fall time
1.0
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC1875
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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