概述
数据手册2SC2258_15 概述
Silicon NPN Power Transistors
2SC2258_15 数据手册
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Product Specification
Silicon NPN Power Transistors
2SC2258
DESCRIPTION
·
·With TO-126 package
·High transition frequency fT
·High collector-emitter voltage VCEO
APPLICATIONS
·For high breakdown voltage general
amplification
·For video output amplification
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
250
UNIT
V
V
V
A
A
Collector- emitter voltage
Emitter-base voltage
Collector current
Open base
250
Open collector
7
0.1
ICM
Collector current-peak
0.15
1.2*1
4*2
PC
Collector power dissipation
TC=25℃
W
Tj
Junction temperature
Storage temperature
150
℃
℃
Tstg
-55～+150
Note :*1: Without heat sink
*2: With a 100 × 100 × 2 mm A1 heat sink
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2258
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
ICER
PARAMETER
Collector cutoff current
CONDITIONS
VCE=250V;RBE=100kΩ
IE=0.1mA ;IC=0
MIN
TYP.
MAX
UNIT
μA
V
100
V(BR)EBO
VCEsat
VBE
Emitter-base breakdown voltage
7
Collector-emitter saturation voltage IC=50mA ;IB=5m A
1.2
1.2
V
Base-emitter voltage
DC current gain
IC=40mA ; VCE=20V
V
hFE-1
IC=40mA ; VCE=20V
40
30
hFE-2
DC current gain
IC=5mA ; VCE=50V
COB
Output capacitance
Transition frequency
IE=0; VCB=50V;f=1MHz
IE=-10mA ; VCE=10V,f=200MHz
3
4.5
pF
fT
100
MHz
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2258
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC2258
4
2SC2258_15 相关器件
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