2SC4706_2015 概述
Silicon NPN Power Transistors
2SC4706_2015 数据手册
通过下载2SC4706_2015数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载JMnic
Product Specification
Silicon NPN Power Transistors
2SC4706
DESCRIPTION
·With TO-3PN package
·High voltage switching transistor
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
900
600
7
UNIT
V
Open base
V
Open collector
V
14
A
ICM
Collector current-peak
Base current
28
A
IB
7
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
130
150
-55~150
W
℃
℃
Tj
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4706
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector cut-off current
CONDITIONS
IC=10mA ; IB=0
MIN
TYP.
MAX
UNIT
V
600
VCB=800V; IE=0
VEB=7V; IC=0
0.1
0.1
25
mA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=7A ; VCE=4V
IC=7A ; IB=1.4A
IC=7A ; IB=1.4A
VCE=12V;IE=-1.5A
VCB=10V;f=1MHz
10
VCE(sat)
VBE(sat)
fT
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.5
1.2
V
V
6
MHz
pF
COB
Collector output capacitance
160
Switching times
ton Turn-on time
ts
1.0
5.0
0.7
μs
μs
μs
IC=7A;RL=35.7Ω
IB1=1.05A;IB2=-3.5A
Storage time
Fall time
V
CC=250V
tf
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4706
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC4706
4
2SC4706_2015 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
2SC4707 | TOSHIBA | NPN EPITAXIAL TYPE (LOW FREQUENCY, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS) | 获取价格 | |
2SC4707TPE6 | TOSHIBA | TRANSISTOR 500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | 获取价格 | |
2SC4708 | RENESAS | Si, NPN, RF SMALL SIGNAL TRANSISTOR | 获取价格 | |
2SC4708B | RENESAS | Si, NPN, RF SMALL SIGNAL TRANSISTOR | 获取价格 | |
2SC4708C | RENESAS | Si, NPN, RF SMALL SIGNAL TRANSISTOR | 获取价格 | |
2SC4709 | SANYO | High-Voltage Amplifier, High-Voltage Switching Applications | 获取价格 | |
2SC4710 | SANYO | High-Voltage Amp, High-Voltage Switching Applications | 获取价格 | |
2SC4710LS | SANYO | 2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications | 获取价格 | |
2SC4713K | ROHM | 2SC4310 | 获取价格 | |
2SC4713KQ | ETC | TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 50MA I(C) | SOT-23VAR | 获取价格 |
2SC4706_2015 相关文章
- 2024-09-20
- 6
- 2024-09-20
- 9
- 2024-09-20
- 8
- 2024-09-20
- 6