概述
数据手册2SC5386_2015 概述
Silicon NPN Power Transistors
2SC5386_2015 数据手册
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Product Specification
Silicon NPN Power Transistors
2SC5386
DESCRIPTION
·With TO-3P(H)IS package
·High voltage;high speed
·Low collector saturation voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display,color TV
·High speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
V
1500
Open base
600
V
Open collector
5
V
8
16
A
ICM
Collector current-Peak
Base current
A
IB
4
A
PC
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5386
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA ;IB=0
600
IC=6A; IB=1.5A
3.0
1.5
1.0
10
V
IC=6A; IB=1.5A
V
VCB=1500V; IE=0
VEB=5V; IC=0
mA
μA
IEBO
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=6A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
IE=0.1A ; VCE=10V
15
35
hFE-2
DC current gain
4.3
7.5
Cob
Collector output capacitance
Transition frequency
105
1.7
pF
fT
MHz
Switching times
ts
tf
Storage time
2.5
3.5
0.3
μs
μs
ICP=5A;IB1( )=1.0A
fH =64kHz
end
Fall time
0.15
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5386
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5386
4
2SC5386_2015 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SC5387 | TOSHIBA | NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS) | 获取价格 |
|
| 2SC5387 | ISC | isc Silicon NPN Power Transistor | 获取价格 |
|
| 2SC5388 | SANYO | High-Voltage Switching Applications | 获取价格 |
|
| 2SC5388-LF | SUNSPIRIT | High-Voltage Switching Applications NPN Triple Diffused Planar Silicon Transistor | 获取价格 |
|
| 2SC5389 | PANASONIC | Power Bipolar Transistor, 6A I(C), 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | 获取价格 |
|
| 2SC538A | ETC | TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 50MA I(C) | TO-18 | 获取价格 |
|
| 2SC539 | ETC | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 50MA I(C) | TO-18 | 获取价格 |
|
| 2SC5390 | HITACHI | Silicon NPN Epitaxial High Frequency Amplifier | 获取价格 |
|
| 2SC5392 | PANASONIC | Silicon NPN triple diffusion planar type | 获取价格 |
|
| 2SC5393 | PANASONIC | Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) | 获取价格 |
|
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