BB156_15 [JMNIC]
Low-voltage variable capacitance diode;
| 型号： | BB156_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Low-voltage variable capacitance diode |
| 文件： | 总7页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BB156
Low-voltage variable capacitance
diode
Product specification
2004 Mar 01
Supersedes data of 1998 Aug 17
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
BB156
FEATURES
PINNING
• Excellent linearity
PIN
DESCRIPTION
• Very small plastic SMD package
• C7.5: 4.8 pF; ratio 3.3
1
2
cathode
anode
• Very low series resistance.
APPLICATIONS
1
2
• Voltage controlled oscillators (VCO).
sym008
Top view
DESCRIPTION
The BB156 is a planar technology variable capacitance
diode, in a SOD323 very small plastic SMD package.
Marking code: PF.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
BB156
−
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER
MIN. MAX. UNIT
VR
IF
continuous reverse voltage
continuous forward current
storage temperature
−
10
20
V
−
mA
Tstg
Tj
−55
−55
+150 °C
+125 °C
operating junction temperature
2004 Mar 01
2
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
BB156
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VR = 10 V; see Fig.3
VR = 10 V; Tj = 85 °C; see Fig.3
diode series resistance f = 470 MHz; Cd = 9 pF
MIN. TYP. MAX. UNIT
IR
reverse current
−
−
−
−
10
nA
nA
Ω
−
200
0.7
rs
0.4
Cd
diode capacitance
f = 1 MHz; see Figs 2 and 4
VR = 1 V
14.4
7.6
4.2
2.7
16
17.6
9.6
5.4
3.9
pF
pF
pF
VR = 4 V
8.6
4.8
3.3
VR = 7.5 V
capacitance ratio
f = 1 MHz
Cd (1 V)
----------------------
Cd (7.5 V)
2004 Mar 01
3
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
BB156
GRAPHICAL DATA
MGR466
20
C
d
(pF)
16
12
8
4
0
10
2
−1
1
10
10
(V)
V
R
f = 1 MHz; Tj = 25 °C.
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MBH583
mlc816
3
3
10
10
handbook, halfpage
I
R
TC
d
)
(nA)
−1
(K
4
2
10
10
5
10
10
1
2
10
0
50
100
1
10
10
V
(V)
T (°C)
j
R
Tj = 0 °C to 85 °C.
Fig.4 Temperature coefficient of diode
Fig.3 Reverse current as a function of junction
temperature; maximum values.
capacitance as a function of reverse
voltage; typical values.
2004 Mar 01
4
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
BB156
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
99-09-13
03-12-17
SOD323
SC-76
2004 Mar 01
5
Philips Semiconductors
Product specification
Low-voltage variable capacitance diode
BB156
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Mar 01
6
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R77/02/pp7
Date of release: 2004 Mar 01
Document order number: 9397 750 12658
相关型号：
BB157/TM
DIODE VHF BAND, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SC-76, 2 PIN, Variable Capacitance Diode
NXP
BB158-T
DIODE VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
NXP
BB158/T3
DIODE VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SMD, 2 PIN, Variable Capacitance Diode
NXP
BB158T/R
DIODE VHF-UHF BAND, 39.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SMD, 2 PIN, Variable Capacitance Diode
NXP
BB159-T
DIODE UHF BAND, 18.75 pF, SILICON, VARIABLE CAPACITANCE DIODE, Variable Capacitance Diode
NXP
BB159/T3
DIODE UHF BAND, 18.75 pF, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SMD, 2 PIN, Variable Capacitance Diode
NXP
BB159T/R
DIODE UHF BAND, 18.75 pF, SILICON, VARIABLE CAPACITANCE DIODE, PLASTIC, SMD, 2 PIN, Variable Capacitance Diode
NXP
©2020 ICPDF网 联系我们和版权申明