BFG67_15 [JMNIC]
NPN 8 GHz wideband transistors;型号: | BFG67_15 |
厂家: | QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
描述: | NPN 8 GHz wideband transistors |
文件: | 总16页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG67; BFG67/X; BFG67/XR
NPN 8 GHz wideband transistors
1998 Oct 02
Product specification
Supersedes data of September 1995
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
FEATURES
PINNING
PIN
• High power gain
DESCRIPTION
• Low noise figure
BFG67
collector
BFG67/X
collector
BFG67/XR
collector
• High transition frequency
1
2
3
4
• Gold metallization ensures
excellent reliability.
base
emitter
base
emitter
base
emitter
emitter
emitter
emitter
APPLICATIONS
Wideband applications in the GHz
range, such as satellite TV tuners and
portable RF communications
equipment.
DESCRIPTION
NPN silicon transistor in a 4-pin,
dual-emitter SOT143B plastic
package. Available with in-line emitter
pinning (BFG67) and cross emitter
pinning (BFG67/X). Version with
reverse pinning (BFG67/XR) also
available on request.
4
3
2
3
4
1
2
1
Top view
MSB014
Top view
MSB035
MARKING
TYPE NUMBER
CODE
BFG67 (Fig.1)
V3
Fig.1 Simplified outline
SOT143B.
Fig.2 Simplified outline
SOT143R.
BFG67/X (Fig.1)
BFG67/XR (Fig.2)
V12
V26
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCEO
IC
collector-emitter voltage
collector current (DC)
total power dissipation
feedback capacitance
transition frequency
open base
−
−
−
10
50
V
mA
mW
pF
Ptot
Cre
fT
Ts ≤ 65 °C
300
−
IC = ic = 0; VCB = 8 V; f = 1 MHz
IC = 15 mA; VCE = 8 V; f = 500 MHz
0.5
8
−
GHz
dB
GUM
maximum unilateral power IC = 15 mA; VCE = 8 V;
17
−
gain
Tamb = 25 °C; f = 1 GHz
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
1.3
2.2
−
−
dB
dB
Γs = Γopt; IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
open base
10
open collector
2.5
50
collector current (DC)
total power dissipation
storage temperature range
junction temperature
mA
mW
°C
Ptot
Tstg
Tj
Ts ≤ 65 °C; see Fig.3; note 1
380
150
175
−65
−
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-s
thermal resistance from junction to soldering point
note 1
290
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBC984 - 1
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0
50
100
150
200
o
T ( C)
s
Fig.3 Power derating curve.
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VCB = 5 V; IE = 0
MIN.
TYP.
MAX.
50
UNIT
nA
ICBO
hFE
fT
collector leakage current
DC current gain
−
−
IC = 15 mA; VCE = 5 V
60
−
100
8
−
−
−
−
−
−
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
IC = 15 mA; VCE = 8 V; f = 500 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = ic = 0; VCB = 8 V; f = 1 MHz
GHz
pF
Cc
−
0.7
1.3
0.5
17
Ce
−
pF
Cre
GUM
−
pF
maximum unilateral power IC = 15 mA; VCE = 8 V;
−
dB
gain; note 1
Tamb = 25 °C; f = 1 GHz
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz
−
−
−
−
−
10
1.3
1.7
2.5
3
−
−
−
−
−
dB
dB
dB
dB
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE = 8 V
Tamb = 25 °C; f = 1 GHz
Γs = Γopt; IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 1 GHz
IC = 5 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω
IC = 15 mA; VCE = 8 V;
Tamb = 25 °C; f = 2 GHz; ZS = 60 Ω
Note
2
S21
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
dB.
--------------------------------------------------------------
(1 – S11 2) (1 – S22
)
2
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB302
MBB301
0.8
handbook, halfpage
120
handbook, halfpage
C
re
(pF)
h
FE
0.6
80
0.4
0.2
40
0
0
0
4
8
12
16
0
20
40
60
V
(V)
CB
I
(mA)
C
VCE = 5 V.
IC = ic = 0; f = 1 MHz.
Fig.4 DC current gain as a function of collector
current.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
MBB303
MBB304
10
25
handbook, halfpage
handbook, halfpage
f
T
gain
(dB)
(GHz)
MSG
8
6
4
2
0
20
G
max
G
UM
15
10
5
0
0
10
20
30
40
0
10
20
30
40
I
(mA)
C
I
(mA)
C
VCE = 8 V; f = 1 GHz.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
VCE = 8 V; Tamb = 25 °; f = 2 GHz.
Gmax = maximum available gain.
Fig.6 Transition frequency as a function of
collector current.
Fig.7 Gain as a function of collector current.
1998 Oct 02
5
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB305
MBB306
50
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
40
(dB)
40
G
G
UM
UM
30
30
20
10
MSG
MSG
20
G
G
max
max
10
0
0
2
3
4
2
3
4
10
10
10
10
f (MHz)
10
10
10
10
f (MHz)
VCE = 8 V; IC = 5 mA.
VCE = 8 V; IC = 15 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
Gmax = maximum available gain.
Gmax = maximum available gain.
Fig.8 Gain as a function of frequency.
Fig.9 Gain as a function of frequency.
MBB307
MBB308
50
4
handbook, halfpage
gain
handbook, halfpage
f = 2 GHz
F
(dB)
40
(dB)
G
UM
3
2
1
1 GHz
900 MHz
500 MHz
30
20
10
MSG
G
max
0
0
1
2
3
4
10
10
10
10
10
100
f (MHz)
I
(mA)
C
VCE = 8 V; IC = 30 mA.
GUM = maximum unilateral power gain;
MSG = maximum stable gain;
VCE = 8 V.
Gmax = maximum available gain.
Fig.11 Minimum noise figure as a function of
collector current.
Fig.10 Gain as a function of frequency.
1998 Oct 02
6
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
MBB309
4
handbook, halfpage
F
(dB)
I
= 30 mA
C
3
2
15 mA
5 mA
1
0
10
2
3
4
10
10
f (MHz)
VCE = 8 V.
Fig.12 Minimum noise figure as a function of
frequency.
BFG67/X
stability
circle
f
VCE
(V)
IC
(mA)
1
(MHz)
0.5
2
500
8
5
Noise Parameters
0.2
Gamma (opt)
5
Fmin
(dB)
F
min
=0.95 dB
Rn/50
0.288
(mag)
0.455
(ang)
OPT
10
+ j
− j
0.95
33.8
0.2
0.5
1
2
5
10
0
∞
1.5 dB
10
2 dB
3 dB
5
0.2
2
0.5
MBB317
1
ZO = 50 Ω.
Fig.13 Noise circle figure.
1998 Oct 02
7
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
BFG67/X
stability
circle
f
VCE
(V)
IC
(mA)
1
(MHz)
0.5
2
1000
8
5
Noise Parameters
F
0.2
=1.3 dB
Gamma (opt)
min
5
Fmin
(dB)
Rn/50
OPT
(mag)
(ang)
65.9
10
+ j
− j
1.3
0.375
0.304
0.2
0.5
1
2
5
10
∞
0
2 dB
10
5
3 dB
4 dB
0.2
2
0.5
MBB316
1
ZO = 50 Ω.
Fig.14 Noise circle figure.
BFG67/X
1
f
VCE
(V)
IC
(mA)
(MHz)
0.5
2
2000
8
5
Noise Parameters
0.2
5
F
=2.2 dB
Gamma (opt)
min
4 dB
Fmin
(dB)
3 dB
Rn/50
OPT
5 dB
10
(mag)
(ang)
136.5
+ j
0.2
0.5
1
2
5
10
2.2
0.391
0.184
∞
0
G
max
– j
Average Gain Parameters
10
=12dB
11 dB
10 dB
9 dB
Gamma (max)
GMAX
(dB)
5
0.2
8 dB
(mag)
0.839
(ang)
12
−170
2
0.5
MBB315
1
ZO = 50 Ω.
Fig.15 Noise circle figure.
1998 Oct 02
8
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
1
0.5
2
3 GHz
0.2
5
10
+ j
0.2
0.5
1
2
5
10
∞
0
− j
10
40 MHz
5
0.2
2
0.5
MBB314
1
VCE = 8 V; IC = 15 mA; ZO = 50 Ω.
Fig.16 Common emitter input reflection coefficient (S11).
90°
120°
60°
150°
30°
40 MHz
+ϕ
−ϕ
3 GHz
50
40
30
20
10
180°
0°
30°
150°
120°
60°
MBB313
VCE = 8 V; IC = mA; ZO = 50 Ω.
90°
Fig.17 Common emitter forward transmission coefficient (S21).
1998 Oct 02
9
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
1
0.5
2
0.2
5
10
+ j
0.2
0.5
1
2
5
10
∞
0
40 MHz
− j
10
3 GHz
5
0.2
2
0.5
MBB312
1
VCE = 8 V; IC = 15 mA.
Fig.18 Common emitter reverse transmission coefficient (S12).
90°
120°
60°
3 GHz
150°
30°
+ϕ
−ϕ
40 MHz
0.5 0.4
0.3
0.2
0.1
180°
0°
30°
150°
60°
120°
MBB311
90°
VCE = 8 V; IC = 15 mA.
Fig.19 Common emitter output reflection coefficient (S22).
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
1998 Oct 02
11
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-03-10
SOT143R
1998 Oct 02
12
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
13
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
NOTES
1998 Oct 02
14
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
NOTES
1998 Oct 02
15
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© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/04/pp16
Date of release: 1998 Oct 02
Document order number: 9397 750 04349
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RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
YAGEO
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