BAV23C [KEC]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | BAV23C |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
BAV23C
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
High Voltage Switching.
FEATURES
E
L
B
L
· Low Leakage Current.
DIM
A
MILLIMETERS
_
· Repetitive Peak Reverse Voltage : VRRM≦250V.
· Low Capacitance : CT≦2pF.
+
2.93 0.20
B
C
D
E
1.30+0.20/-0.15
1.30 MAX
2
3
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
1
G
H
J
0.95
0.13+0.10/-0.05
K
L
0.00 ~ 0.10
0.55
P
P
MAXIMUM RATING (Ta=25℃)
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
CHARACTERISTIC
Maximum (Peak) Reverse Voltage
Reverse Voltage
SYMBOL RATING
UNIT
V
M
VRM
VR
250
200
3
V
1. ANODE 1
2. ANODE 2
3. CATHODE
IFM
Maximum (Peak) Forward Current
625
mA
2
1
Single diode loaded.
225
IF
Forward Current
mA
Double diode loaded.
t = 1μs
125
9
A
A
SOT-23
Surge Current
(Square wave)
IFSM
3
t = 100μs
t = 10ms
1.7
A
PD
Tj
Power Dissipation
250*
150
mW
℃
℃
Marking
Lot No.
Junction Temperature
Tstg
Storage Temperature Range
-55∼ 150
Type Name
U 4
Note : * Device mounted on a FR4 Printed-Circuit Board (PCB)
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
1.0
UNIT
V
IF=100mA
-
-
-
-
-
-
-
-
-
-
-
-
VF
Forward Voltage
IF=200mA
1.25
0.1
VR=200V
IR
Reverse Current
μA
VR=200V, Tj=150℃
VR=0V, f=1MHz
IF=10mA, IR=10mA, IRM=1mA
100
2
CT
trr
Total Capacitance
pF
ns
Reverse Recovery Time
50
2009. 5. 15
Revision No : 1
1/2
BAV23C
I
- V
I
- V
R R
F
F
102
500
400
300
200
100
0
101
1
150 C
85 C
-40 C
150 C
10-1
10-2
10-3
10-4
10-5
10-6
25 C
25 C
85 C
-40 C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
50
100
150
200
250
FORWARD VOLTAGE VF (V)
REVERSE VOLTAGE VR (V)
C
- V
I
- T
a
T
R
F
1.2
1
250
200
150
100
50
0.8
0.6
0.4
0.2
0
Single
Double
0
0
0
5
10
15
20
25
30
50
100
150
REVERSE VOLTAGE VR (V)
AMBIENT TEMPERATURE Ta ( C)
Fig. 1. REVERSE RECOVERY TIME(t ) TEST CIRCUIT
rr
INPUT
WAVEFORM
INPUT
DUT
WAVEFORM
0.01µF
I
OUTPUT
SAMPLING
OSCILLOSCOPE
0
F
0
0.1 I
R
(R =50Ω)
IN
-6V
I
R
50ns
E
t
rr
PULSE GENERATOR
(R =50Ω)
OUT
2009. 5 .15
Revision No : 1
2/2
相关型号：
BAV23C-TP
Rectifier Diode, 2 Element, 0.225A, 200V V(RRM), Silicon, LEAD FREE, PLASTIC PACKSGE-3
MCC
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