概述
数据手册BCX19_99 概述
EPITAXIAL PLANAR NPN TRANSISTOR 外延平面NPN晶体管
BCX19_99 数据手册
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PDF下载SEMICONDUCTOR
BCX19
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
L
B
L
FEATURE
DIM MILLIMETERS
Super Mini Packaged Transistors for Hybrid Circuits.
_
+
2.93 0.20
A
B
C
D
E
G
H
J
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
2
3
1
0.95
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
K
L
SYMBOL RATING
UNIT
V
P
P
M
N
P
0.20 MIN
1.00+0.20/-0.10
7
VCEO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
45
V
M
5
V
Collector Current
500
mA
mA
mW
1. EMITTER
2. BASE
IE
Emitter Current
-500
200
3. COLLECTOR
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Tj
150
SOT-23
Tstg
-65 150
Marking
Lot No.
Type Name
U1
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
V(BR)CEO
V(BR)CES
V(BR)EBO
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
IC=10mA, IB=0
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
45
50
5.0
-
-
-
-
V
V
-
IC=10 A, VBE=0
IE=10 A, IC=0
VCB=20V, IE=0
-
-
V
-
100
5.0
600
-
nA
A
ICBO
Collector Cut-off Current
-
-
Ta=150 , VCB=20V, IE=0
VCE=1V, IC=100mA
100
70
40
-
-
hFE
VCE=1V, IC=300mA
DC Current Gain
-
-
VCE=1V, IC=500mA
-
VBE(ON)
VCE(sat)
fT
VCE=1V, IC=500mA
Base-Emitter Voltage
-
1.2
0.62
-
V
V
IC=500mA, IB=50mA
IC=10mA, VCE=5V, f=100MHz
VCB=10V, f=1MHz
Collector-Emitter Saturation Voltage
Transition Frequency
-
-
-
200
6.0
MHz
pF
Cob
Collector Output Capacitance
-
-
1999. 11. 30
Revision No : 2
1/1
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