GM200HB12CT [KEC]
1200V/200A 2 IN ONE PACKAGE; 1200V / 200A 2在一个封装
| 型号： | GM200HB12CT |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | 1200V/200A 2 IN ONE PACKAGE |
| 文件： | 总3页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
GM200HB12CT
TECHNICAL DATA
1200V/200A 2 IN ONE PACKAGE
TENTATIVE
FEATURES
· IGBT New Technology
· Low VCE(sat)
Unit : mm
OUTLINE DRAWING
_
· Low Turn-off losses
· Short tail current
108.5+ 0.2
_
6.5+0.2
_
_
28+0.2
28+0.2
· Positive temperature coefficient
G2
E2
APPLICATION
E1
G1
· AC & DC Motor controls
· General purpose inverters
· Optimized for high current inverter
· Servo Controls
M6
_
+
93 0.2
_
108.5+ 0.2
· UPS, Robotics
_
_
_
18+0.2
18+0.2
18+0.2
_
1.3+0.2
_
_
_
14+0.2
14+0.2
14+0.2
G2
E2
C2E1
C1
E2
E1
G1
Internal Circuit
MAXIMUM RATING (@Ta=25℃ Per Leg)
CHARACTERISTIC
SYMBOL
VCES
RATING
UNIT
V
Collector-to-Emitter Voltage
Gate-Emitter Voltage
@TC=25℃
1200
±20
260
200
400
260
200
400
10
VGES
V
@TC=25℃
@TC=80℃
@TC=25℃
@TC=25℃
@TC=80℃
@TC=25℃
@TC=25℃
@TC=125℃
IC
ICP
IF
Continuous Collector Current
Pulsed Collector Current
A
A
A
A
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Test
IFM
tP
㎲
8
Viso
Tj
Isolation Voltage test
AC @ 1 minute
2500
V
Junction Temperature
-40 ~ 150
-40 ~ 125
360
℃
℃
Tstg
Storage Temperature
Weight of Module
Weight
g
Mounting Torque with screw : M6
Terminal Connection torque : M6
4.0
N.m
N.m
Md
4.0
2009. 6. 19
Revision No : 0
1/3
GM200HB12CT
STATIC CHARACTERISTICS (@Tj=25℃ Unless otherwise specified)
CHARACTERISTIC
Collector-to-Emitter Saturation Volatge
Gate Threshold Voltage
SYMBOL
VCE(ON)
VGE(th)
ICES
TEST CONDITION
IC =200A, VGE=15V
MIN.
TYP.
1.7
5.8
-
MAX. UNIT
1.4
5.0
-
2.1
V
6.5
IC =8mA, VCE=VGE
VGE=0V, VCE=1200V
VCE=0V, VCE=20V
IF =200A, VGE=0V
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Volatge
Diode Forward Voltage Drop
Integrated gate resistor
5.0
400
1.9
-
mA
nA
V
IGES
-
-
VFM
1.2
-
1.6
3.8
RGINT
Ω
ELECTRICAL CHARACTERISTICS (IGBT/DIODE)(@Ta=25℃ Unless otherwise specified)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
nF
IGBT
Cies
Coes
Cres
td(on)
tr
Input Capacitance
-
-
-
-
-
-
-
14420
760
660
290
50
-
-
-
-
-
-
-
VCE=25V, VGE=0V, f=1MHz
Ouput Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Inductive Switching 125℃
VCC=600V, IC=200A,
ns
V
td(off)
tr
Turn-Off Delay Time
Fall Time
520
90
VGE=±15V,RG=3.9Ω
DIODE
VRRM
IRM
trr
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Ieakage current
Reverse Recovery Time
Reverse Recovery Charge
1200
-
-
-
350
-
VR=1200V
-
-
-
㎂
170
18
ns
IF=200A, VR=600V, di/dt=2500A/㎲
Qrr
-
μC
THERMAL CHARACTERISTIC
CHARACTERISTIC
SYMBOL
Rth(j-c)
MIN
TYP
MAX.
UNIT
Junction to Case (IGBT Part, Per 1/2 Module)
Junction to Case (Didoe Part, Per 1/2 Module)
Case to Heat Sink (Conductive grease applied)
-
-
-
-
-
0.09
0.17
-
Rth(j-c)
℃/W
Rth(j-s)
0.03
※ Data and specifications subject to change without notice.
2009. 6. 19
Revision No : 0
2/3
GM200HB12CT
Fig 1. Typ. IGBT Output Characteristics IGBT
Fig 2. Typ. IGBT Out Characteristics
400
300
200
100
0
400
300
200
100
0
VGE=17V
VGE=15V
VGE=13V
VGE=9V
Tj=25
Tj=125
C
C
Tj=125
C
0
1
2
3
4
0
1
2
3
4
VCE (V)
VCE (V)
Fig 3. Typ. Transfer Characteristics IGBT
Fig 4. Reverse Bias Operating Area IGBT
400
350
300
250
200
150
100
50
450
400
350
300
250
200
150
100
50
Tj=25
C
Tj=125
C
VGE =15V, R =2.7Ω, T =125
C
G
j
0
0
5
6
7
8
9
10
11
12
0
300
600
900
1200
1500
V
CE (V)
VGE (V)
Fig 5. Forward Characteristics of Diode IGBT
400
350
300
250
200
150
100
50
Tj=25
C
Tj=125
C
0
0
0.4
0.8
1.2
1.6
2.0
2.4
VF (V)
2009. 6. 19
Revision No : 0
3/3
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