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KF11N50P/F [KEC]

N CHANNEL MOS FIELD EFFECT TRANSISTOR;
KF11N50P/F
型号： KF11N50P/F
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

N CHANNEL MOS FIELD EFFECT TRANSISTOR
文件： 总7页 (文件大小：401K)
中文：  中文翻译
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KF11N50P/F  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF11N50P  
A
O
C
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for electronic ballast and  
switching mode power supplies.  
F
E
I
DIM MILLIMETERS  
G
_
A
B
C
D
E
F
9.9 0.2  
+
B
15.95 MAX  
1.3+0.1/-0.05  
Q
_
0.8+ 0.1  
FEATURES  
_
3.6 0.2  
+
_
2.8+ 0.1  
· VDSS= 500V, ID= 11A  
· Drain-Source ON Resistance :  
RDS(ON)=0.52Ω (Max) @VGS = 10V  
· Qg(typ.) = 26nC  
K
P
3.7  
G
H
I
M
N
0.5+0.1/-0.05  
1.5  
L
J
_
J
13.08+ 0.3  
K
L
M
N
O
P
D
1.46  
_
1.4 + 0.1  
H
N
_
1.27+ 0.1  
_
2.54+ 0.2  
MAXIMUM RATING (Tc=25℃)  
_
+
4.5 0.2  
_
+
2.4 0.2  
RATING  
_
9.2 + 0.2  
Q
CHARACTERISTIC  
SYMBOL  
UNIT  
1
2
3
1. GATE  
2. DRAIN  
KF11N50P  
KF11N50F  
3. SOURCE  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
500  
V
V
±30  
TO-220AB  
11  
7
11*  
7*  
ID  
Drain Current  
@TC=100℃  
A
KF11N50F  
IDP  
Pulsed (Note1)  
33  
33*  
C
A
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
400  
6.6  
4.5  
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
DIM MILLIMETERS  
E
_
A
B
C
D
E
10.16 0.2  
+
_
15.87 0.2  
+
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
_
2.54 0.2  
+
_
0.8 0.1  
+
178  
46.3  
0.37  
W
W/℃  
℃
Tc=25℃  
_
+
3.18  
0.1  
Drain Power  
Dissipation  
PD  
_
3.3 0.1  
+
F
1.43  
Derate above 25℃  
_
12.57 0.2  
+
G
H
J
L
M
_
0.5 0.1  
+
R
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
_
13.0 0.5  
+
_
K
L
3.23 0.1  
+
Tstg  
D
-55∼ 150  
℃
1.47 MAX  
1.47 MAX  
M
N
O
Q
R
Thermal Characteristics  
N
N
H
_
2.54 0.2  
+
_
6.68 0.2  
+
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
0.7  
62.5  
2.7  
℃/W  
℃/W  
_
4.7  
+
_
0.2  
Thermal Resistance, Junction-to-  
Ambient  
2.76 0.2  
+
1
2
3
62.5  
1. GATE  
2. DRAIN  
3. SOURCE  
* : Drain current limited by maximum junction temperature.  
*Single Gauge Lead Frame  
TO-220IS (1)  
EQUIVALENT CIRCUIT  
D
G
S
2013. 5. 03  
Revision No : 1  
1/7  
KF11N50P/F  
ELECTRICAL CHARACTERISTICS (Tc=25℃)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
Static  
BVDSS  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature Coefficient  
Drain Cut-off Current  
Gate Threshold Voltage  
Gate Leakage Current  
Drain-Source ON Resistance  
Dynamic  
ID=250μA, VGS=0V  
500  
-
-
-
V
V/℃  
μA  
V
ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃  
-
-
0.55  
IDSS  
Vth  
VDS=500V, VGS=0V,  
VDS=VGS, ID=250μA  
VGS=±30V, VDS=0V  
VGS=10V, ID=5.5A  
-
10  
2.5  
-
-
-
4.5  
IGSS  
nA  
Ω
±100  
0.52  
RDS(ON)  
-
0.42  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
-
-
-
-
-
-
-
-
-
-
26  
6.5  
9.1  
45  
-
-
-
-
-
-
-
-
-
-
VDS=400V, ID=11A  
VGS=10V  
Gate-Source Charge  
nC  
ns  
pF  
A
(Note4,5)  
(Note4,5)  
Gate-Drain Charge  
Turn-on Delay time  
VDD=250V  
ID=11A  
Turn-on Rise time  
35  
td(off)  
tf  
Turn-off Delay time  
100  
35  
RG=25Ω  
Turn-off Fall time  
Ciss  
Coss  
Crss  
Input Capacitance  
1400  
170  
12  
VDS=25V, VGS=0V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
IS  
ISP  
VSD  
trr  
-
-
-
-
-
-
-
11  
44  
1.4  
-
VGS<Vth  
IS=11A, VGS=0V  
-
V
ns  
360  
4.4  
IS=11A, VGS=0V,  
dIs/dt=100A/μs  
Qrr  
-
μC  
Note 1) Repetivity rating : Pulse width limited by junction temperature.  
Note 2) L=6.2mH, IS=11A, VDD=50V, RG=25Ω , Starting Tj=25℃.  
Note 3) IS≤ 11A, dI/dt≤ 200A/μs, VDD≤ BVDSS, Starting Tj=25℃.  
Note 4) Pulse Test : Pulse width ≤ 300μs, Duty Cycle≤ 2%.  
Note 5) Essentially independent of operating temperature.  
Marking  
1
1
KF11N50  
KF11N50  
2
101  
F
2
101  
P
1
2
PRODUCT NAME  
LOT NO  
2013. 5. 03  
Revision No : 1  
2/7  
KF11N50P/F  
Fig1. I - V  
Fig2. I - V  
D GS  
D
DS  
102  
100  
10  
V
=20V  
DS  
V
=10V, 7V  
GS  
101  
100  
10-1  
100 C  
V
=5V  
25 C  
GS  
1
0.1  
0.1  
10  
Drain - Source Voltage VDS (V)  
3
4
5
6
7
8
9
10  
1
100  
Gate - Source Voltage VGS (V)  
Fig3. BV  
- T  
Fig4. R  
- I  
DS(ON) D  
DSS  
j
1.2  
1.1  
1.0  
0.9  
0.8  
0.8  
0.6  
0.4  
0.2  
VGS = 0V  
IDS = 250  
V
=7V  
GS  
V
=10V  
GS  
100  
-100  
-50  
0
50  
150  
0
5
10  
Drain Current ID (A)  
15  
20  
Junction Temperature Tj (  
)
C
Fig6. R  
- T  
j
DS(ON)  
Fig5. I - V  
S
SD  
102  
101  
100  
10-1  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
V
I
=10V  
= 5.5A  
GS  
DS  
100 C  
25 C  
-100  
-50  
0
50  
100  
150  
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8  
(V)  
Junction Temperature T (  
)
C
Source - Drain Voltage VSD  
j
2013. 5. 03  
Revision No : 1  
3/7  
KF11N50P/F  
Fig 7. C - V  
DS  
Fig8. Q - V  
g
GS  
104  
103  
102  
101  
12  
10  
8
ID=11A  
C
C
V
= 400V  
iss  
DS  
6
oss  
4
2
C
rss  
40  
0
5
15  
20  
35  
40  
0
10  
25  
30  
(nC)  
0
10  
20  
30  
Gate - Charge  
Q
g
Drain - Source Voltage VDS (V)  
Fig10. Safe Operation Area  
Fig9. Safe Operation Area  
(KF11N50F)  
(KF11N50P)  
102  
101  
102  
101  
100  
10-1  
10-2  
10µs  
10µs  
100µs  
100µs  
1ms  
1ms  
100  
10-1  
10-2  
Operation in this  
area is limited by RDS(ON)  
10ms  
10ms  
Operation in this  
area is limited by R  
DS(ON)  
DC  
DC  
T = 25  
T = 25  
C
C
c
j
c
C
T = 150  
C
T = 150  
j
Single pulse  
Single pulse  
100  
101  
102  
103  
102  
103  
100  
101  
Drain - Source Voltage V  
(V)  
Drain - Source Voltage V  
(V)  
DS  
DS  
Fig11. I - T  
D
j
14  
12  
10  
8
6
4
2
0
25  
50  
75  
125  
)
150  
100  
Junction Temperature T  
(
C
j
2013. 5. 03  
Revision No : 1  
4/7  
KF11N50P/F  
Fig12. Transient Thermal Response Curve  
(KF11N50P)  
100  
10-1  
10-2  
Duty=0.5  
0.2  
0.1  
P
DM  
0.05  
t
1
0.02  
t
2
- Rth(j-c) = 0.7 C/W Max.  
- Duty Factor, D= t1/t2  
Single Pulse  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
TIME (sec)  
Fig13. Transient Thermal Response Curve  
(KF11N50F)  
101  
100  
Duty=0.5  
0.2  
P
0.1  
DM  
t
0.05  
1
10-1  
10-2  
t
0.02  
2
- Rth(j-c) = 2.7 C/W Max.  
- Duty Factor, D= t1/t2  
Single Pulse  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
TIME (sec)  
2013. 5. 03  
Revision No : 1  
5/7  
KF11N50P/F  
Fig14. Gate Charge  
V
GS  
10 V  
Fast  
Recovery  
Diode  
I
D
0.8 V  
DSS  
I
D
1.0 mA  
Q
V
Q
Q
DS  
gd  
gs  
Q
g
V
GS  
Fig15. Single Pulsed Avalanche Energy  
BV  
1
2
DSS  
2
E
AS  
=
LIAS  
BV  
- V  
DD  
DSS  
BVDSS  
L
I
AS  
50V  
25Ω  
ID(t)  
VDS  
V
GS  
VDD  
VDS(t)  
10 V  
Time  
t
p
Fig16. Resistive Load Switching  
VDS  
90%  
R
L
0.5 V  
DSS  
10%  
VGS  
td(off)  
25 Ω  
t
td(on)  
ton  
r
t
f
V
DS  
toff  
V
GS  
10V  
2013. 5. 03  
Revision No : 1  
6/7  
KF11N50P/F  
Fig17. Source - Drain Diode Reverse Recovery and dv /dt  
Body Diode Forword Current  
DUT  
V
DS  
I
SD  
(DUT)  
di/dt  
I
F
I
RM  
I
S
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
0.5  
V
DSS  
V
DS  
(DUT)  
driver  
VSD  
V
DD  
V
GS  
10V  
Body Diode Forword Voltage drop  
2013. 5. 03  
Revision No : 1  
7/7  

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