KF3N40D/I [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR;
| 型号： | KF3N40D/I |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：936K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KF3N40D/I
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF3N40D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
switching mode power supplies.
A
C
K
DIM MILLIMETERS
L
D
B
_
A
B
C
D
E
6.60 + 0.20
_
6.10+0.20
_
5.34 + 0.30
_
0.70+0.20
_
2.70 + 0.15
_
2.30+0.10
F
FEATURES
0.96 MAX
0.90 MAX
G
H
J
· VDSS(Min.)= 400V, ID= 2.2A
· Drain-Source ON Resistance : RDS(ON)=3.4 Ω (max) @VGS =10V
· Qg(typ.) =4.4nC
H
J
_
1.80+0.20
E
_
2.30+0.10
K
L
G
N
_
0.50 + 0.10
_
F
F
M
M
N
O
0.50+0.10
0.70 MIN
0.1 MAX
MAXIMUM RATING (Tc=25℃)
1
2
3
1. GATE
2. DRAIN
3. SOURCE
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
SYMBOL
VDSS
RATING
400
UNIT
V
O
VGSS
V
±30
2.2
DPAK (1)
ID
Drain Current
@TC=100℃
1.4
A
IDP
Pulsed (Note1)
6*
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
EAS
52
3
mJ
mJ
KF3N40I
A
C
H
EAR
J
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
V/ns
DIM MILLIMETERS
_
TC=25℃
40
0.32
W
W/℃
℃
A
B
C
D
E
F
6.6
+
_
0.2
Drain Power
PD
6.1 0.2
+
M
Dissipation
_
+
5.34
0.3
Derate above25℃
P
_
0.7 0.2
+
N
Tj
_
9.3 0.3
+
Maximum Junction Temperature
Storage Temperature Range
150
_
2.3 0.2
+
Tstg
_
-55∼ 150
℃
G
H
J
0.76 0.1
+
G
_
2.3 0.1
+
Thermal Characteristics
_
L
0.5 0.1
+
F
F
_
K
L
M
N
P
1.8 0.2
+
RthJC
RthJA
Thermal Resistance, Junction-to-Case
3.1
℃/W
℃/W
_
+
0.5
0.1
_
1.0 0.1
+
Thermal Resistance, Junction-to-
Ambient
0.96 MAX
_
1
2
3
110
1.02 0.3
+
1. GATE
2. DRAIN
3. SOURCE
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
IPAK(1)
D
G
S
2010. 8. 23
Revision No : 0
1/6
KF3N40D/I
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT
Static
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
ID=250μA, VGS=0V
400
-
0.4
-
-
-
V
V/℃
μA
V
ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃
-
-
IDSS
Vth
VDS=400V, VGS=0V,
VDS=VGS, ID=250μA
VGS=±30V, VDS=0V
VGS=10V, ID=1.1A
10
2.5
-
-
4.5
±100
3.4
IGSS
-
nA
Ω
RDS(ON)
-
2.8
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
4.4
1.0
2.0
10
5.8
VDS=320V, ID=2.2A
VGS=10V
Gate-Source Charge
-
nC
ns
pF
A
(Note4,5)
(Note4,5)
Gate-Drain Charge
-
Turn-on Delay time
-
VDD=200V, ID=2.2A
RG=25Ω
Turn-on Rise time
11
-
td(off)
tf
Turn-off Delay time
20
-
VGS=10V
Turn-off Fall time
17
-
211
-
Ciss
Coss
Crss
Input Capacitance
163
26
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
2.5
-
IS
ISP
VSD
trr
-
-
-
-
-
-
-
2
8
VGS<Vth
IS=2.2A, VGS=0V
-
1.4
-
V
ns
240
0.65
IS=2.2A, VGS=0V,
dIs/dt=100A/μs
Qrr
-
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 19mH, IS=2.2A, VDD=50V, RG = 25Ω , Starting Tj = 25℃.
Note 3) IS ≤ 2A, dI/dt≤ 200A/㎲, VDD≤ BVDSS, Starting Tj = 25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
2
1
2
KF3N40
KF3N40
D
I
001
001
1
2
PRODUCT NAME
LOT NO
2010. 8. 23
Revision No : 0
2/6
KF3N40D/I
2010. 8. 23
Revision No : 0
3/6
KF3N40D/I
10
1
0.1
0.01
10-4
10-3
10-2
10-1
100
1
10
2010. 8. 23
Revision No : 0
4/6
KF3N40D/I
2010. 8. 23
Revision No : 0
5/6
KF3N40D/I
2010. 8. 23
Revision No : 0
6/6
相关型号：
©2020 ICPDF网 联系我们和版权申明