KF50N06P [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应型号: | KF50N06P |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
文件: | 总6页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KF50N06P
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
A
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology and
switching mode power supplies.
O
C
F
E
I
DIM MILLIMETERS
G
Q
_
9.9 + 0.2
A
B
C
D
E
F
B
15.95 MAX
1.3+0.1/-0.05
_
0.8 + 0.1
_
3.6 0.2
+
FEATURES
K
_
2.8 + 0.1
P
VDSS = 60V, ID = 50A
3.7
0.5+0.1/-0.05
1.5
G
H
I
M
N
L
Drain-Source ON Resistance :
RDS(ON) =17m (Max.) @VGS = 10V
Qg(typ.) = 39.5nC
J
D
_
13.08 + 0.3
J
1.46
H
K
L
M
N
O
P
N
_
1.4 0.1
+
_
1.27 0.1
+
_
2.54 0.2
+
_
4.5 0.2
+
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)
_
2.4 0.2
+
_
9.2 +0.2
1
2
3
1. GATE
2. DRAIN
3. SOURCE
Q
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
SYMBOL
VDSS
RATING
60
UNIT
V
VGSS
V
±20
50
TO-220AB
ID*
Drain Current
@TC=100℃
32
A
IDP
Pulsed (Note1)
170
Single Pulsed Avalanche Energy
(Note 2)
EAS
330
9
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
4.5
V/ns
96
0.77
W
W/℃
℃
Tc=25℃
Drain Power
Dissipation
PD
Derate above 25℃
Tj
Maximum Junction Temperature
Storage Temperature Range
150
Tstg
-55∼ 150
℃
Thermal Characteristics
RthJC
RthJA
Thermal Resistance, Junction-to-Case
1.3
℃/W
℃/W
Thermal Resistance,
Junction-to-Ambient
62.5
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2009. 5. 6
Revision No : 0
1/6
KF50N06P
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX. UNIT
Static
BVDSS
ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
ID=250μA, VGS=0V
60
-
-
-
-
V
V/℃
μA
V
0.08
IDSS
Vth
VDS=60V, VGS=0V,
VDS=VGS, ID=250μA
VGS=±20V, VDS=0V
VGS=10V, ID=25A
-
-
10
2
-
-
-
4
IGSS
nA
mΩ
±100
17.0
RDS(ON)
-
14.2
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
39.5
8
-
-
-
-
-
-
-
-
-
-
VDS=48V, ID=50A
VGS=10V
Gate-Source Charge
nC
ns
pF
A
(Note4,5)
(Note4,5)
Gate-Drain Charge
16
Turn-on Delay time
30
VDD=30V
ID=50A
Turn-on Rise time
100
80
td(off)
tf
Turn-off Delay time
RG=25Ω
Turn-off Fall time
64
Ciss
Coss
Crss
Input Capacitance
1560
405
76
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
IS
ISP
VSD
trr
-
-
-
-
-
-
-
50
200
1.4
-
VGS<Vth
IS=50A, VGS=0V
-
V
ns
72
185
IS=50A, VGS=0V,
dIs/dt=100A/μs
Qrr
-
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L =132μH, IS=50A, VDD=30V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 50A, dI/dt≤ 200A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KF50N06
2
901
P
1
2
PRODUCT NAME
LOT NO
2009. 5. 6
Revision No : 0
2/6
KF50N06P
Fig1. I - V
D
Fig2. I - V
D
DS
GS
1000
100
10
1000
100
10
VDS = 20V
V
=10V
GS
V
=7V
GS
100 C
25 C
V
=5V
GS
1
1
0.1
10
2
6
8
1
100
4
10
Gate - Source Voltage VGS (V)
Drain - Source Voltage VDS (V)
Fig3. BV
- T
j
Fig4. R
- I
DSS
DS(ON)
D
1.2
1.1
1.0
0.9
0.8
28
25
22
19
16
13
10
VGS = 0V
IDS = 250
V
=7V
GS
V
=10V
60
GS
100
-50
0
50
150
0
10
20
30
40
50
70
80
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig5. I - V
S
Fig6. R
- T
DS(ON) j
SD
2.6
2.2
1.8
1.4
1.0
0.6
0.2
100
10
1
V
I
=10V
GS
= 25A
D
100 C
25 C
0.4
0.6
0.8
1
1.2
1.4
-50 -25
0
25
50
75 100 125 150
(V)
Junction Temperature T (
j
)
Source - Drain Voltage VSD
C
2009. 5. 6
Revision No : 0
3/6
KF50N06P
Fig 7. C - V
Fig 8. Q - V
g DS
DS
10000
1000
100
10
8
C
C
iss
V
=48V
DS
6
oss
4
C
rss
2
10
0
30
40
0
5
10
15
20
25
30
35
40
0
10
20
Drain - Source Voltage VDS (V)
Gate - Charge Q (nC)
g
Fig 9. Safe Operation Area
Fig 10. I - T
D
C
(KF50N06P)
1000
100
10
60
50
40
30
20
10
0
10µs
100µs
1ms
10ms
100ms
DC
1
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
Drain - Source Voltage VDS (V)
Case Temperature TC ( C)
Fig 11. R of KF50N06P
th
10
Duty=0.5
1
0.2
0.1
P
DM
t
1
0.05
0.1
0.02
t
2
0.01
- Duty Factor, D= t1/t2
j(max) - Tc
PD
T
- RthJC
=
Single Pulse
0.01
101
10-5
10-4
10-3
10-2
10-1
100
Square Wave Pulse Duration (sec)
2009. 5. 6
Revision No : 0
4/6
KF50N06P
Fig12. Gate Charge
V
GS
10 V
Fast
Recovery
Diode
I
D
0.8 V
DSS
I
D
1.0 mA
Q
V
Q
Q
DS
gd
gs
Q
g
V
GS
Fig13. Single Pulsed Avalanche Energy
BV
1
2
DSS
2
E
AS
=
LIAS
BV
- V
DSS
DD
BVDSS
L
I
AS
50V
25Ω
ID(t)
VDS
V
GS
VDD
VDS(t)
10 V
Time
t
p
Fig14. Resistive Load Switching
VDS
90%
R
L
0.5 V
DSS
10%
VGS
td(off)
25 Ω
t
td(on)
ton
r
t
f
V
DS
toff
V
GS
10V
2009. 5. 6
Revision No : 0
5/6
KF50N06P
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.5
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
2009. 5. 6
Revision No : 0
6/6
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