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KF60N06P [KEC]

N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应
KF60N06P
型号： KF60N06P
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

N CHANNEL MOS FIELD EFFECT TRANSISTOR
N沟道MOS场效应
文件： 总6页 (文件大小：83K)
中文：  中文翻译
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KF60N06P  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
A
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for active power factor  
correction , electronic lamp ballasts based on half bridge topology,  
DC/DC Converters and switching mode power supplies.  
O
C
F
E
I
DIM MILLIMETERS  
G
Q
_
9.9 + 0.2  
A
B
C
D
E
F
B
15.95 MAX  
1.3+0.1/-0.05  
_
0.8 + 0.1  
_
3.6 0.2  
+
FEATURES  
K
_
2.8 + 0.1  
P
VDSS = 60V, ID = 60A  
3.7  
0.5+0.1/-0.05  
1.5  
G
H
I
M
N
L
Drain-Source ON Resistance :  
RDS(ON) =13.2m (Max.) @VGS = 10V  
Qg(typ.) = 48nC  
J
D
_
13.08 + 0.3  
J
1.46  
H
K
L
M
N
O
P
N
_
1.4 0.1  
+
_
1.27 0.1  
+
_
2.54 0.2  
+
_
4.5 0.2  
+
MOSFET MAXIMUM RATING (Ta=25 Unless otherwise noted)  
_
2.4 0.2  
+
_
9.2 +0.2  
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
Q
CHARACTERISTIC  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
SYMBOL  
VDSS  
RATING  
60  
UNIT  
V
VGSS  
V
±20  
60  
TO-220AB  
ID*  
Drain Current  
@TC=100℃  
37  
A
IDP  
Pulsed (Note1)  
230  
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
430  
13.5  
4.5  
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
113  
0.90  
W
W/℃  
℃
Tc=25℃  
Drain Power  
Dissipation  
PD  
Derate above 25℃  
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55∼ 150  
℃
Thermal Characteristics  
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
1.1  
℃/W  
℃/W  
Thermal Resistance,  
Junction-to-Ambient  
62.5  
* : Drain current limited by maximum junction temperature.  
PIN CONNECTION  
D
G
S
2009. 12.21  
Revision No : 0  
1/6  
KF60N06P  
ELECTRICAL CHARACTERISTICS (Tc=25℃)  
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
Static  
BVDSS  
ΔBVDSS/ΔTj ID=250μA, Referenced to 25℃  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature Coefficient  
Drain Cut-off Current  
Gate Threshold Voltage  
Gate Leakage Current  
Drain-Source ON Resistance  
Dynamic  
ID=250μA, VGS=0V  
60  
-
-
-
-
V
V/℃  
μA  
V
0.08  
IDSS  
Vth  
VDS=60V, VGS=0V,  
VDS=VGS, ID=250μA  
VGS=±20V, VDS=0V  
VGS=10V, ID=30A  
-
-
10  
2
-
-
-
4
IGSS  
nA  
mΩ  
±100  
13.2  
RDS(ON)  
-
11.5  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
-
-
-
-
-
-
-
-
-
-
48  
9.2  
19  
-
-
-
-
-
-
-
-
-
-
VDS=48V, ID=60A  
VGS=10V  
Gate-Source Charge  
nC  
ns  
pF  
A
(Note4,5)  
(Note4,5)  
Gate-Drain Charge  
Turn-on Delay time  
35  
VDD=30V  
ID=60A  
Turn-on Rise time  
75  
td(off)  
tf  
Turn-off Delay time  
100  
75  
RG=25Ω  
Turn-off Fall time  
Ciss  
Coss  
Crss  
Input Capacitance  
1860  
490  
92  
VDS=25V, VGS=0V, f=1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
IS  
ISP  
VSD  
trr  
-
-
-
-
-
-
-
60  
240  
1.4  
-
VGS<Vth  
IS=60A, VGS=0V  
-
V
ns  
70  
180  
IS=60A, VGS=0V,  
dIs/dt=100A/μs  
Qrr  
-
nC  
Note 1) Repetivity rating : Pulse width limited by junction temperature.  
Note 2) L =120μH, IS=60A, VDD=30V, RG=25Ω , Starting Tj=25℃.  
Note 3) IS≤ 60A, dI/dt≤ 200A/㎲, VDD≤ BVDSS, Starting Tj=25℃.  
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%.  
Note 5) Essentially independent of operating temperature.  
Marking  
1
KF60N06  
2
901  
P
1
2
PRODUCT NAME  
LOT NO  
2009. 12.21  
Revision No : 0  
2/6  
KF60N06P  
Fig1. I - V  
D
Fig2. I - V  
D
DS  
GS  
1000  
100  
10  
1000  
100  
10  
VDS = 20V  
V
=10V  
GS  
V
=7V  
GS  
V
=5V  
GS  
100 C  
25 C  
1
1
0.1  
10  
2
6
8
1
100  
4
10  
Gate - Source Voltage VGS (V)  
Drain - Source Voltage VDS (V)  
Fig3. BV  
- T  
j
Fig4. R  
- I  
DSS  
DS(ON)  
D
1.2  
1.1  
1.0  
0.9  
0.8  
20  
18  
16  
14  
12  
10  
8
VGS = 0V  
IDS = 250  
V
=7V  
GS  
V
=10V  
GS  
100  
-50  
0
50  
150  
0
20  
40  
60  
80  
100  
120  
Junction Temperature Tj (  
)
Drain Current ID (A)  
C
Fig5. I - V  
S
Fig6. R  
- T  
DS(ON) j  
SD  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
200  
100  
V
I
=10V  
GS  
= 30A  
D
100 C  
25 C  
10  
1
0.4  
0.6  
0.8  
1
1.2  
1.4  
-50 -25  
0
25  
50  
75 100 125 150  
(V)  
Junction Temperature T (  
j
)
Source - Drain Voltage VSD  
C
2009. 12.21  
Revision No : 0  
3/6  
KF60N06P  
Fig 7. C - V  
Fig 8. Q - V  
g DS  
DS  
10000  
1000  
100  
10  
8
C
C
iss  
V
=48V  
DS  
6
oss  
4
C
rss  
2
10  
0
30  
40  
50  
0
5
10  
15  
20  
25  
30  
35  
40  
0
10  
20  
Drain - Source Voltage VDS (V)  
Fig 9. Safe Operation Area  
Gate - Charge Q (nC)  
g
Fig 10. I - T  
D
C
1000  
100  
10  
70  
60  
50  
40  
30  
20  
10  
0
10µs  
100µs  
1ms  
10ms  
DC  
1
0.1  
0
25  
50  
75  
100  
125  
150  
175  
0.1  
1
10  
100  
Drain - Source Voltage VDS (V)  
Case Temperature TC ( C)  
Fig 11. R (j-c)  
th  
10  
1
Duty=0.5  
0.2  
0.1  
0.1  
0.05  
/  
c  
0.02  
0.01  
Single Pulse  
0.01  
2009. 12.21  
Revision No : 0  
4/6  
KF60N06P  
Fig12. Gate Charge  
V
GS  
10 V  
Fast  
Recovery  
Diode  
I
D
0.8 V  
DSS  
I
D
1.0 mA  
Q
V
Q
Q
DS  
gd  
gs  
Q
g
V
GS  
Fig13. Single Pulsed Avalanche Energy  
BV  
1
2
DSS  
2
E
AS  
=
LIAS  
BV  
- V  
DSS  
DD  
BVDSS  
L
I
AS  
30V  
25Ω  
ID(t)  
VDS  
V
GS  
VDD  
VDS(t)  
10 V  
Time  
t
p
Fig14. Resistive Load Switching  
VDS  
90%  
R
L
0.5 V  
DSS  
10%  
VGS  
td(off)  
25 Ω  
t
td(on)  
ton  
r
t
f
V
DS  
toff  
V
GS  
10V  
2009. 12.21  
Revision No : 0  
5/6  
KF60N06P  
Fig15. Source - Drain Diode Reverse Recovery and dv /dt  
Body Diode Forword Current  
DUT  
V
DS  
I
SD  
(DUT)  
di/dt  
I
F
I
RM  
I
S
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
0.5  
V
DSS  
V
DS  
(DUT)  
driver  
VSD  
V
DD  
V
GS  
10V  
Body Diode Forword Voltage drop  
2009. 12.21  
Revision No : 0  
6/6  

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