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KHB019N20P1_07 [KEC]

N CHANNEL MOS FIELD EFFECT TRANSISTOR; N沟道MOS场效应
KHB019N20P1_07
型号： KHB019N20P1_07
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

N CHANNEL MOS FIELD EFFECT TRANSISTOR
N沟道MOS场效应
文件： 总7页 (文件大小：501K)
中文：  中文翻译
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KHB019N20P1/F1/F2  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KHB019N20P1  
A
O
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for DC/DC converters  
and switching mode power supplies.  
C
F
E
I
DIM MILLIMETERS  
G
_
A
B
C
D
E
F
9.9 + 0.2  
B
15.95 MAX  
Q
1.3+0.1/-0.05  
_
0.8 + 0.1  
_
3.6 + 0.2  
K
_
P
2.8 + 0.1  
3.7  
0.5+0.1/-0.05  
1.5  
G
H
I
M
N
L
FEATURES  
J
D
_
J
13.08 + 0.3  
VDSS=200V, ID=19A  
1.46  
H
K
L
M
N
O
P
N
_
1.4 0.1  
+
Drain-Source ON Resistance : RDS(ON)=0.18  
Qg(typ.)=35nC  
@VGS = 10V  
_
1.27 0.1  
+
_
2.54 0.2  
+
_
4.5 0.2  
+
_
2.4 0.2  
+
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
_
Q
9.2 +0.2  
MAXIMUM RATING (Tc=25  
)
TO-220AB  
RATING  
CHARACTERISTIC  
SYMBOL  
UNIT  
KHB019N20F1  
KHB019N20F2  
KHB019N20F1  
KHB019N20P1  
C
A
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25  
200  
30  
V
V
DIM MILLIMETERS  
E
_
10.16 0.2  
+
A
B
C
D
E
_
15.87 0.2  
+
19  
12.1  
76  
19*  
12.1*  
76*  
_
2.54 0.2  
+
ID  
_
0.8 0.1  
+
Drain Current  
A
@TC=100  
_
3.18 + 0.1  
_
3.3 0.1  
+
F
IDP  
Pulsed (Note1)  
_
12.57 0.2  
+
G
H
J
L
M
N
_
0.5 0.1  
+
R
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
13.0 MAX  
250  
mJ  
mJ  
_
K
L
3.23 0.1  
+
D
1.47 MAX  
Repetitive Avalanche Energy  
(Note 1)  
1.47 MAX  
EAR  
M
N
O
Q
R
14  
N
H
_
2.54 0.2  
+
_
6.68 0.2  
+
Peak Diode Recovery dv/dt  
(Note 3)  
_
4.7 + 0.2  
dv/dt  
4.5  
V/ns  
_
2.76 0.2  
+
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
140  
50  
W
Tc=25  
Drain Power  
Dissipation  
PD  
1.12  
0.4  
Derate above 25  
W/  
Tj  
TO-220IS (1)  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55 150  
KHB019N20F2  
Thermal Characteristics  
A
C
RthJC  
RthCS  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
0.89  
2.5  
-
/W  
/W  
S
0.5  
E
MILLIMETERS  
DIM  
A
B
C
D
E
_
10.0+0.3  
Thermal Resistance, Junction-to-  
Ambient  
_
15.0+0.3  
RthJA  
62.5  
62.5  
/W  
_
2.70+0.3  
0.76+0.09/-0.05  
_
3.2+0.2  
* : Drain current limited by maximum junction temperature.  
L
L
_
F
3.0+0.3  
R
_
G
H
J
12.0+0.3  
PIN CONNECTION  
0.5+0.1/-0.05  
M
_
13.6 0.5  
+
D
D
_
3.7 0.2  
+
1.2+0.25/-0.1  
K
L
D
1.5+0.25/-0.1  
M
N
P
N
N
H
_
2.54+0.1  
_
6.8+0.1  
_
4.5 0.2  
+
Q
R
S
_
2.6 0.2  
+
0.5 Typ  
3
2
1
G
1. GATE  
2. DRAIN  
3. SOURCE  
TO-220IS  
S
2007. 5. 10  
Revision No : 0  
1/7  
KHB019N20P1/F1/F2  
ELECTRICAL CHARACTERISTICS (Tc=25  
)
CHARACTERISTIC  
SYMBOL  
TEST CONDITION  
MIN.  
TYP.  
MAX. UNIT  
Static  
BVDSS  
Drain-Source Breakdown Voltage  
Breakdown Voltage Temperature Coefficient  
Drain Cut-off Current  
Gate Threshold Voltage  
Gate Leakage Current  
Drain-Source ON Resistance  
Dynamic  
200  
-
-
-
V
ID=250 A, VGS=0V  
-
-
0.18  
BVDSS  
/
Tj ID=250 A, Referenced to 25  
VDS=200V, VGS=0V,  
V/  
IDSS  
-
10  
4
A
Vth  
2
-
-
-
V
VDS=VGS, ID=250 A  
IGSS  
nA  
VGS  
= 30V, VDS=0V  
100  
RDS(ON)  
VGS=10V, ID=9.5A  
-
0.14  
0.18  
Qg  
Qgs  
Qgd  
td(on)  
tr  
Total Gate Charge  
-
-
-
-
-
-
-
-
-
-
35  
4.8  
18  
44  
-
VDS=160V, ID=19A  
VGS=10V  
Gate-Source Charge  
nC  
ns  
pF  
A
(Note4,5)  
(Note4,5)  
Gate-Drain Charge  
-
Turn-on Delay time  
12  
30  
VDD=100V  
RL=5  
Turn-on Rise time  
33  
70  
td(off)  
tf  
Turn-off Delay time  
130  
75  
270  
160  
1170  
277  
104  
RG=25  
Turn-off Fall time  
Ciss  
Crss  
Coss  
Input Capacitance  
900  
213  
80  
VDS=25V, VGS=0V, f=1.0MHz  
Reverse Transfer Capacitance  
Output Capacitance  
Source-Drain Diode Ratings  
Continuous Source Current  
Pulsed Source Current  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
IS  
ISP  
VSD  
trr  
-
-
-
-
-
-
-
19  
76  
1.5  
-
VGS<Vth  
IS=19A, VGS=0V  
-
V
ns  
C
215  
2
IS=19A, VGS=0V,  
dIs/dt=100A/ s  
Qrr  
-
Note 1) Repetivity rating : Pulse width limited by junction temperature.  
Note 2) L =1mH, IS=19A, VDD=50V, RG=25 , Starting Tj=25  
Note 3) IS 19A, dI/dt 200A/ , VDD BVDSS, Starting Tj=25  
.
.
Note 4) Pulse Test : Pulse width 300 , Duty Cycle  
Note 5) Essentially independent of operating temperature.  
2%.  
2007. 5. 10  
Revision No : 0  
2/7  
KHB019N20P1/F1/F2  
Fig1. I - V  
Fig2. I - V  
D
D
GS  
DS  
V
GS  
TOP : 15.0 V  
10.0 V  
8.0 V  
7.0 V  
6.5 V  
6.0 V  
5.5 V  
101  
101  
5.0 V  
Bottom : 4.5 V  
150 C  
25 C  
-55 C  
100  
100  
10-1  
10-1  
100  
101  
2
4
6
8
10  
Drain - Source Voltage VDS (V)  
Gate - Source Voltage VGS (V)  
Fig3. BV  
- T  
Fig4. R  
- I  
DS(ON) D  
DSS  
j
0.8  
0.6  
0.4  
0.2  
0.0  
1.2  
1.1  
1.0  
0.9  
0.8  
VGS = 0V  
IDS = 250  
VGS = 10V  
VGS = 20V  
100  
)
-100  
-50  
0
50  
150  
0
10  
20  
30  
40  
50  
60  
Junction Temperature Tj (  
Drain Current ID (A)  
C
Fig5. I - V  
Fig6. R  
- T  
DS(ON) j  
S
SD  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
VGS = 10V  
IDS = 9.5V  
101  
100  
150  
C
25  
C
10-1  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
(V)  
2.4  
-100  
-50  
0
50  
100  
150  
Source - Drain Voltage VSD  
Junction Temperature T (  
)
C
j
2007. 5. 10  
Revision No : 0  
3/7  
KHB019N20P1/F1/F2  
Fig8. Q - V  
Fig7. C - V  
g
GS  
DS  
12  
5000  
4500  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
Frequency = 1MHz  
ID= 19A  
V
= 160V  
DS  
10  
8
V
= 100V  
DS  
V
= 40V  
DS  
C
oss  
6
C
iss  
4
C
2
rss  
0
0
10-1  
100  
101  
0
10  
20  
30  
40  
Drain - Source Voltage V (V)  
DS  
Gate - Charge Q (nC)  
g
Fig9. Safe Operation Area  
Fig10. Safe Operation Area  
(KHB019N20P1)  
(KHB019N20F1, KHB019N20F2)  
Operation in this  
area is limited by RDS(ON)  
Operation in this  
area is limited by RDS(ON)  
102  
102  
101  
100  
10-1  
10  
s
100  
s
101  
100  
100  
s
1ms  
1 ms  
10ms  
DC  
10 ms  
DC  
T = 25  
c
T = 25  
Tj = -150  
Single nonrepetitive pulse  
C
C
c
Tj = 150  
C
C
Single nonrepetitive pulse  
10-1  
102  
102  
100  
101  
100  
101  
Drain - Source Voltage V (V)  
Drain - Source Voltage V (V)  
DS  
DS  
Fig11. I - T  
D
j
20  
15  
10  
5
0
50  
75  
125  
)
150  
25  
100  
Junction Temperature T (  
j
C
2007. 5. 10  
Revision No : 0  
4/7  
KHB019N20P1/F1/F2  
Fig12. Transient Thermal Response Curve  
100  
10-1  
10-2  
Duty=0.5  
0.2  
P
0.1  
DM  
t
0.05  
0.02  
1
t
2
- Duty Factor, D= t1/t2  
100  
Single Pulse  
10-5  
10-4  
10-3  
10-2  
10-1  
101  
TIME (sec)  
Fig13. Transient Thermal Response Curve  
100  
10-1  
10-2  
Duty=0.5  
0.2  
0.1  
P
DM  
0.05  
0.02  
t
2
Single Pulse  
- Duty Factor, D= t1/t2  
100  
10-5  
10-4  
10-3  
10-2  
10-1  
101  
TIME (sec)  
2007. 5. 10  
Revision No : 0  
5/7  
KHB019N20P1/F1/F2  
Fig14. Gate Charge  
V
GS  
10 V  
Fast  
Recovery  
Diode  
I
D
0.8 V  
DSS  
I
D
1.0 mA  
Q
V
Q
Q
DS  
gd  
gs  
Q
g
V
GS  
Fig15. Single Pulsed Avalanche Energy  
BV  
1
2
DSS  
2
E
=
LIAS  
AS  
BV  
- V  
DD  
DSS  
BVDSS  
L
I
AS  
50V  
25  
ID(t)  
VDS  
VDD  
VDS(t)  
10 V  
V
GS  
Time  
t
p
Fig16. Resistive Load Switching  
VDS  
90%  
R
L
0.5  
V
DSS  
10%  
VGS  
25  
t
f
V
DS  
t
td(on)  
ton  
r
td(off)  
toff  
10V  
V
GS  
2007. 5. 10  
Revision No : 0  
6/7  
KHB019N20P1/F1/F2  
Fig17. Source - Drain Diode Reverse Recovery and dv /dt  
Body Diode Forword Current  
DUT  
V
DS  
I
SD  
(DUT)  
I
di/dt  
F
I
RM  
I
S
Body Diode Reverse Current  
Body Diode Recovery dv/dt  
0.8 V  
DSS  
V
DS  
(DUT)  
driver  
VSD  
V
DD  
10V  
V
GS  
Body Diode Forword Voltage drop  
2007. 5. 10  
Revision No : 0  
7/7  

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