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KIC7WZU04FK [KEC]

SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(TRIPLE INVERTER); 硅单片CMOS数字集成电路（ TRIPLE INVERTER ）
KIC7WZU04FK
型号： KIC7WZU04FK
厂家： KEC(KOREA ELECTRONICS)    KEC(KOREA ELECTRONICS)
描述：

SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT(TRIPLE INVERTER)
硅单片CMOS数字集成电路（ TRIPLE INVERTER ）
文件： 总3页 (文件大小：533K)
中文：  中文翻译
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KIC7WZU04FK  
SEMICONDUCTOR  
SILICON MONOLITHIC CMOS  
DIGITAL INTEGRATED CIRCUIT  
TECHNICAL DATA  
Triple Inverter (unbuffer)  
FEATURES  
·High output drive : ±8mA(min.) @VCC=4.5V.  
·Super high speed operation : tpd 3.4ns(typ.) @VCC=5V, 50pF.  
·Operation voltage range : VCC(opr)=1.65~5.5V.  
B
C
DIM MILLIMETERS  
_
A
B
C
2.0+0.1  
1
4
8
_
3.1+ 0.1  
_
+
2.3 0.1  
D
E
F
0.5  
0.2+0.05/-0.04  
5
_
0.7+ 0.1  
_
G
0.12+0.04  
MAXIMUM RATINGS (Ta=25℃)  
H
0 ~ 0.1  
CHARACTERISTIC  
Power Supply Voltage  
SYMBOL  
VCC  
VIN  
RATING  
-0.5~7  
-0.5~7  
-0.5~7  
-50  
UNIT  
V
G
H
DC Input Voltage  
V
VOUT  
IIK  
DC Output Voltage  
V
Input Diode Current  
Output Diode Current  
DC Output Current  
mA  
mA  
mA  
mA  
mW  
℃
IOK  
±50  
US8  
IOUT  
ICC  
±50  
DC VCC/ground Current  
Power Dissipation  
±100  
200  
PD  
MARKING  
Tstg  
Storage Temperature Range  
Lead Temperature (10s)  
-65∼150  
260  
TL  
℃
Type Name  
ZU04  
Lot No.  
Logic Diagram  
IN A  
1
OUT Y  
PIN CONNECTION(TOP VIEW)  
1A  
3Y  
1
2
3
4
8
7
6
5
V
CC  
1Y  
Truth Table  
A
L
Y
2A  
3A  
2Y  
H
L
GND  
H
2002. 5. 13  
Revision No : 0  
1/3  
KIC7WZU04FK  
Recommended Operating Conditions  
CHARACTERISTIC  
SYMBOL  
VCC  
RATING  
1.8~5.5  
1.5~5.5  
0~5.5  
UNIT  
V
Supply Voltage  
Input Voltage  
(Note1)  
VIN  
V
0~5.5  
(Note2)  
(Note3)  
VOUT  
Output Voltage  
V
0~VCC  
Topr  
Operating Temperature  
-40~85  
℃
Note1 : Data retention only.  
Note2 : VCC=0V.  
Note3 : High or low state  
ELECTRICAL CHARACTERISTICS  
DC Characteristics  
TEST CONDITION  
Ta=25℃  
Ta=-40~85℃  
CHARACTERISTIC  
SYMBOL  
UNIT  
VCC(V)  
1.8~2.7  
MIN.  
TYP.  
MAX.  
MIN.  
MAX.  
0.85×  
VCC  
0.85×  
VCC  
-
-
-
-
-
-
VIH  
High Level  
-
-
3.0~5.5 0.8×VCC  
0.8×VCC  
-
Input  
Voltage  
V
0.15×  
VCC  
0.15×  
VCC  
1.8~2.7  
-
-
VIL  
Low Level  
-
-
0.2×VCC  
-
0.3×VCC  
3.0~5.5  
1.65  
1.8  
1.55  
1.65  
1.79  
2.29  
2.99  
4.48  
1.52  
2.19  
2.82  
2.73  
4.24  
0.01  
0.01  
0.01  
0.01  
0.01  
0.10  
0.12  
0.19  
0.29  
0.29  
-
-
1.55  
-
1.6  
-
1.6  
-
VIN=VIL  
IOH=-100μA  
2.3  
2.1  
-
-
2.1  
-
-
3.0  
2.7  
2.7  
4.5  
4.0  
-
4.0  
-
VOH  
High Level  
IOH=-2mA  
IOH=-2mA  
IOH=-4mA  
IOH=-6mA  
IOH=-8mA  
1.65  
2.3  
1.26  
-
1.26  
-
1.9  
-
1.9  
-
VIN=GND  
3.0  
2.4  
-
2.4  
-
3.0  
2.3  
-
2.3  
-
4.5  
3.8  
-
-
3.8  
-
-
Output  
Voltage  
V
1.65  
1.8  
0.2  
0.2  
0.2  
0.3  
0.5  
0.24  
0.3  
0.4  
0.55  
0.55  
±0.1  
1.0  
-
0.2  
0.2  
0.2  
0.3  
0.5  
0.24  
0.3  
0.4  
0.55  
0.55  
±1.0  
10  
-
-
-
VIN=VIH  
IOL=100μA  
2.3  
-
-
3.0  
-
-
4.5  
-
-
VOL  
Low Level  
IOL=2mA  
IOL=2mA  
IOL=4mA  
IOL=6mA  
IOL=8mA  
1.65  
2.3  
-
-
-
-
VIN=VCC  
3.0  
-
-
3.0  
-
-
4.5  
-
-
IIN  
VIN=5.5V, GND  
VIN=5.5V, GND  
Input Leakage Current  
0~5.5  
1.65~5.5  
1.8  
-
-
μA  
μA  
ICC  
Quiescent Supply Current  
-
-
-
-
0.2  
-
VOUT=Open  
ICCPEAK VIN=Adjust for Peak  
ICC Current  
2.5  
-
2
-
-
-
Peak Supply Current  
in Analog Operation  
mA  
3.3  
-
5
-
-
-
5.0  
-
15  
-
-
-
2002. 5. 13  
Revision No : 0  
2/3  
KIC7WZU04FK  
AC Characteristics  
CHARACTERISTIC  
TEST CONDITION  
Ta=25℃  
TYP.  
5.5  
Ta=-40~85℃  
MIN. MAX.  
1.5 11.0  
SYMBOL  
UNIT  
ns  
VCC(V)  
1.65  
MIN.  
1.5  
1.5  
1.2  
0.8  
0.5  
1.2  
0.8  
-
MAX.  
9.8  
8.1  
5.7  
4.1  
3.3  
6.4  
5.6  
-
1.8  
4.6  
1.5  
1.2  
0.8  
0.5  
1.2  
0.8  
-
8.9  
6.3  
4.5  
3.6  
7.0  
6.2  
-
tPLH  
tPHL  
CL=15pF, RL=1MΩ  
CL=50pF, RL=500Ω  
3.3  
2.5±0.2  
3.3±0.3  
5.0±0.5  
3.3±0.3  
5.0±0.5  
0
Propagation Delay  
(Figures 1,3)  
2.7  
2.2  
4.0  
tPLH  
tPHL  
ns  
pF  
pF  
3.4  
CIN  
Input Capacitance  
3
3.3  
-
3.5  
-
-
-
Power Dissipation  
Capacitance (Figure 2)  
CPD  
(Note)  
5.0  
-
5.5  
-
-
-
Note : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current  
consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic  
operating current by the exprssion : ICCD=CPD·VCC·fIN+ICC  
AC Loading and Waveforms  
V
V
CC  
CC  
A
OUTPUT  
INPUT  
INPUT  
C
L
R
L
C includes load and stray capacitance  
Input=AC Waveform ; t =t =1.8ns  
r
f
L
Input PRR=1.0MHz ; t =500ns  
PRR=variable ; Duty Cycle=50%  
w
FIGURE 1. AC Test Circuit  
FIGURE 2. I  
Test Circuit  
CCD  
t =3ns  
r
t =3ns  
f
V
CC  
90%  
50%  
10%  
INPUT  
GND  
t
w
t
t
PLH  
PHL  
V
OH  
50%  
50%  
OUTPUT  
V
OL  
FIGURE 3. AC Waveforms  
2002. 5. 13  
Revision No : 0  
3/3  

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