KID65081AP/AF [KEC]
SEMICONDUCTOR;
| 型号： | KID65081AP/AF |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SEMICONDUCTOR |
| 文件： | 总7页 (文件大小：902K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KID65081AP/AF~
SEMICONDUCTOR
KID65084AP/AF
TECHNICAL DATA
BIPOLAR LINEAR INTEGRATED CIRCUIT
8 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON
TRANSISTOR ARRAYS
The KID6508* series are high-voltage, high-current darlington
drivers comprised of eight NPN darlington pairs.
All units feature integral clamp diodes for switching inductive loads.
Applications include relay, hammer, lamp and display(LED) drivers.
FEATURES
· Output Current (Single Output) : 500mA Max.
· High Sustaining Voltage Outputs : 50V Min.
· Output Clamp Diodes
· Inputs Compatible With Various Types of Logic.
· PKG Type, AP : DIP-18Pin, DIP-18(1)Pin
· PKG Type, AF : FLP-20Pin
TYPE
INPUT BASE RESISTOR
DESIGNATION
General Purpose
KID65081AP/AF
KID65082AP/AF
KID65083AP/AF
KID65084AP/AF
External
10.5kΩ +7V Zenner diode
14∼ 25V P-MOS
TTL, 5V C-MOS
2.7kΩ
10.5kΩ
6∼ 15V P-MOS, C-MOS
MAXIMUM RATINGS (Ta=25℃, unless otherwise noted)
CHARACTERISTIC
Output Sustaining Voltage
Output Current
SYMBOL
VCE(SUS)
IOUT
RATING
UNIT
V
-0.5∼ 50
500
mA/ch
V
VIN (*1)
IIN (**2)
VR
Input Voltage
-0.5∼ +30
25
Input Current
mA
V
Reverse Voltage
50
Clamp Diode
IF
Forward Current
500
mA
W
AP
1.47
PD
Power Dissipation
AF
0.96
W
Topr
Tstg
Operating Temperature
Storage Temperature
-40∼ 85
-55∼ 150
℃
℃
*1 Except KID65081AP/AF, **2Only KID65081AP/AF
2009. 12. 16
Revision No : 2
1/7
KID65081AP/AF~KID65084AP/AF
2009. 12. 16
Revision No : 2
2/7
KID65081AP/AF~KID65084AP/AF
RECOMMENDED OPERATING CONDITIONS (Ta=-40∼ 85℃)
CHARACTERISTIC
SYMBOL
VCE(SUS)
CONDITION
MIN.
TYP. MAX.
UNIT
V
Output Sustaining Voltage
0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
400
200
350
140
30
TPW=25ms, Duty=8%, 8 Circuits
TPW=25ms, Duty=25%, 8 Circuits
TPW=25ms, Duty=8%, 8 Circuits
TPW=25ms, Duty=25%, 8 Circuits
AP
AF
0
IOUT
Output Current
Input Voltage
mA/ch
0
0
Except
VIN
0
V
V
KID65081AP/AF
KIA65082AP/AF
14
3.5
8
30
Input Voltage
(Output ON)
VIN(ON)
KID65083AP/AF
KID65084AP/AF
30
30
Only
IIN
VR
IF
Input Current
-
5
mA
V
KID65081AP/AF
Clamp Diode Reverse Voltage
Clamp Diode Forward Current
-
50
-
400
0.52
0.35
mA
AP
AF
-
PD
Power Dissipation
W
-
2009. 12. 16
Revision No : 2
3/7
KID65081AP/AF~KID65084AP/AF
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise noted)
TEST
CHARACTERISTICS
SYMBOL
TEST CONDITION
VCE=50V, Ta=25℃
MIN. TYP. MAX. UNIT
CIRCUIT
-
-
50
100
500
500
1.6
1.3
1.1
1.25
1.35
0.5
1.45
-
VCE=50V, Ta=85℃
VCE=50V, VIN=6V
VCE=50V, VIN=1V
IOUT=350mA, IIN=500μA
IOUT=200mA, IIN=350μA
IOUT=100mA, IIN=250μA
VIN=17V
-
-
Output Leak
Current
ICEX
1
2
μA
KID65082AP/AF
KID65084AP/AF
-
-
-
-
1.3
1.1
0.9
0.82
0.93
0.35
1.0
65
-
-
VCE(sat)
Collector-Emitter Saturation Voltage
-
V
-
KID65082AP/AF
-
VIN=3.85V
KID65083AP/AF
-
IIN(ON)
3
4
mA
VIN=5V
Input Current
-
KID65084AP/AF
VIN=12V
-
IIN(OFF)
IOUT=500μA, Ta=85℃
VCE=2V, IOUT=300mA
VCE=2V, IOUT=200mA
VCE=2V, IOUT=250mA
VCE=2V, IOUT=300mA
VCE=2V, IOUT=125mA
VCE=2V, IOUT=200mA
VCE=2V, IOUT=275mA
VCE=2V, IOUT=350mA
VCE=2V, IOUT=350mA
50
μA
KID65082AP/AF
KID65083AP/AF
-
13
-
-
2.4
2.7
3.0
5.0
6.0
7.0
8.0
-
-
-
-
-
Input Voltage
(Output On)
VIN(ON)
5
V
-
-
-
-
KID65084AP/AF
-
-
-
-
hFE
DC Current Transfer Ratio
2
6
7
1000
-
-
-
-
-
-
-
-
50
Ta=25℃ (*1)
Ta=85℃ (*1)
IF=350mA
IR
Clamp Diode Reverse Current
μA
-
100
2.0
-
VF
CIN
tON
tOFF
Clamp Diode Forward Voltage
Input Capacitance
-
V
15
0.1
0.2
pF
Turn-On Delay
-
8
RL=120Ω , VOUT=50V
μs
Turn-Off Delay
-
*1 VR=VR MAX
2009. 12. 16
Revision No : 2
4/7
KID65081AP/AF~KID65084AP/AF
2009. 12. 16
Revision No : 2
5/7
KID65081AP/AF~KID65084AP/AF
Notes : 1. Pulse Width 50μs, Duty Cycle 10%
Output Impedance 50Ω , tr≦5ns, tf≦10ns
2. See below
Input Conditions
RI
VIH
3V
Type Number
KID65081AP/AF
KID65082AP/AF
KID65083AP/AF
KID65084AP/AF
2.7kΩ
0
0
0
13V
3V
8V
3. CL includes probe and Jig capacitance.
2009. 12. 16
Revision No : 2
6/7
KID65081AP/AF~KID65084AP/AF
2009. 12. 16
Revision No : 2
7/7
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