KRA309E [KEC]
EPITAXIAL PLANAR PNP TRANSISTOR; 外延平面PNP晶体管
| 型号： | KRA309E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR PNP TRANSISTOR |
| 文件： | 总4页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KRA307E~KRA309E
EPITAXIAL PLANAR PNP TRANSISTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
B
FEATURES
MILLIMETERS
_
DIM
A
With Built-in Bias Resistors
Simplify Circuit Design
+
1.60 0.10
D
_
+
0.85 0.10
2
1
B
_
+
0.70 0.10
C
D
E
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
3
0.27+0.10/-0.05
_
+
1.60 0.10
_
+
1.00 0.10
G
H
0.50
_
0.13+0.05
J
J
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
TYPE NO.
KRA307E
KRA308E
KRA309E
R1(k
10
)
R2(k
47
)
OUT
1. COMMON (EMITTER)
2. IN (BASE)
R1
IN
22
47
3. OUT (COLLECTOR)
47
22
R2
COMMON(+)
ESM
MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
SYMBOL
VO
RATING
UNIT
Output Voltage
Input Voltage
-50
-30, 6
-40, 7
-40, 15
-100
V
KRA307E 309E
KRA307E
VI
KRA308E
V
KRA309E
IO
PD
Tj
Output Current
mA
Power Dissipation
Junction Temperature
100
mW
KRA307E 309E
150
Tstg
Storage Temperature Range
-55 150
Marking
Type Name
MARK SPEC
TYPE
KRA307E
PH
KRA308E
PI
KRA309E
PJ
MARK
2003. 12. 23
Revision No : 1
1/4
KRA307E~KRA309E
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
IO(OFF)
TEST CONDITION
VO=-50V, VI=0
MIN.
TYP.
-
MAX.
UNIT
nA
Output Cut-off Current
DC Current Gain
Output Voltage
-
-500
KRA307E 309E
KRA307E
KRA308E
KRA309E
KRA307E 309E
KRA307E
KRA308E
KRA309E
KRA307E
KRA308E
KRA309E
KRA307E 309E
KRA307E
KRA308E
KRA309E
KRA307E
KRA308E
KRA309E
KRA307E
KRA308E
KRA309E
KRA307E
KRA308E
KRA309E
80
150
150
140
-0.1
-1.2
-1.8
-3.0
-0.75
-0.88
-1.82
200
-
-
GI
VO=-5V, IO=-10mA
IO=-10mA, II=-0.5mA
VO=-0.2V, IO=-5mA
80
-
70
-
VO(ON)
-
-0.3
V
V
-
-1.8
VI(ON)
Input Voltage (ON)
-
-2.6
-
-5.8
-0.5
-
VI(OFF)
fT *
II
VO=-5V, IO=-0.1mA
VO=-10V, IO=-5mA
VI=-5V
Input Votlage (OFF)
Transition Frequency
Input Current
-0.6
-
V
-1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MHz
mA
-0.88
-
-0.36
-
-0.16
0.07
0.20
0.38
1.1
-
-
-
-
-
-
-
-
-
Rise
tr
tstg
tf
Time
VO=-5V, VIN=-5V
RL=1k
Storage
Time
Switching
Time
1.3
S
0.7
0.35
0.4
Fall
Time
0.48
Note : * Characteristic of Transistor Only.
2003. 12. 23
Revision No : 1
2/4
KRA307E~KRA309E
IO - VI(ON)
IO - VI(OFF)
KRA307E
KRA307E
-3k
-1k
-100
-25
25
100
V
=-0.2V
V
O
=-5V
O
-50
-30
-500
-300
-10
C
-5
-3
Ta=25 C
Ta=-25 C
Ta=100
-100
-1
-50
-30
-0.5
-0.3
-0.1
-0.3
-1
-3
-10
-30
(V)
-100
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
INPUT ON VOLTAGE V
INPUT OFF VOLTAGE V
(V)
I(ON)
I(OFF)
IO - VI(ON)
IO - VI(OFF)
KRA308E
KRA308E
-3k
-1k
-100
V
=-5V
O
V
O
=-0.2V
-50
-30
-500
-300
-10
-5
-3
Ta=25 C
Ta=-25 C
-100
-1
-50
-30
-0.5
-0.3
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8
-0.1
-0.3
-1
-3
-10
-30
-100
INPUT ON VOLTAGE V
(V)
INPUT OFF VOLTAGE V
(V)
I(ON)
I(OFF)
IO - VI(ON)
IO - VI(OFF)
KRA309E
KRA309E
-3k
-1k
-100
V
=-0.2V
V =-5V
O
O
-50
-30
-500
-300
-10
-5
-3
Ta=25 C
Ta=-25 C
-100
-1
-50
-30
-0.5
-0.3
-0.2 -0.6 -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -3.4
-0.1
-0.3
-1
-3
-10
I(ON)
-30
(V)
-100
INPUT ON VOLTAGE V
INPUT OFF VOLTAGE V
I(OFF)
(V)
2003. 12. 23
Revision No : 1
3/4
KRA307E~KRA309E
GI - I O
GI - I O
KRA307E
KRA308E
1k
1k
V
=-5V
V =-5V
O
O
500
300
500
300
Ta=100 C
Ta=25 C
Ta=100 C
Ta=25 C
Ta=-25 C
Ta=-25 C
100
50
100
50
20
20
-1
-3
-10
-30
-100
-1
-3
-10
-30
-100
OUTPUT CURRENT I
(mA)
OUTPUT CURRENT I (mA)
O
O
GI - I O
KRA309E
1k
V
=-5V
O
500
300
Ta=100 C
Ta=25 C
Ta=-25 C
100
50
20
-1
-3
-10
-30
-100
OUTPUT CURRENT I
(mA)
O
2003. 12. 23
Revision No : 1
4/4
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