KRC863E [KEC]
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT); 外延平面NPN晶体管（开关，接口电路和驱动电路）
| 型号： | KRC863E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
KRC860E~KRC864E
EPITAXIAL PLANAR NPN TRANSISTOR
TECHNICAL DATA
SWITCHING APPLICATION.
B
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B1
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
1
2
3
6
5
DIM MILLIMETERS
_
A
A1
B
1.6+0.05
_
1.0+0.05
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
_
1.6+0.05
_
1.2+0.05
B1
C
0.50
_
0.2+0.05
4
D
H
J
_
0.5+0.05
EQUIVALENT CIRCUIT
EQUIVALENT CIRCUIT (TOP VIEW)
_
0.12+0.05
P
P
P
5
6
5
4
C
R1
B
Q1
Q2
1. Q EMITTER
1
2. Q BASE
1
3. Q COLLECTOR
2
4. Q EMITTER
2
5. Q BASE
2
6. Q COLLECTOR
1
E
1
2
3
TES6
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL RATING
UNIT
CHARACTERISTIC
Collector Power Dissipation
Junction Temperature
SYMBOL RATING
UNIT
mW
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
50
50
5
V
V
PC *
Tj
200
150
V
Tstg
Storage Temperature Range
* Total Rating.
-55 150
100
mA
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
MAX.
100
100
-
UNIT
nA
VCB=50V, IE=0
Collector Cut-off Current
-
-
-
IEBO
VEB=5V, IC=0
Emitter Cut-off Current
-
120
-
nA
hFE
VCE=5V, IC=1mA
IC=10mA, IB=0.5mA
VCE=10V, IC=5mA
DC Current Gain
-
VCE(sat)
fT *
Collector-Emitter Saturation Voltage
Transition Frequency
0.1
250
0.3
-
V
-
MHz
KRC860E
KRC861E
-
-
-
-
-
4.7
10
-
-
-
-
-
KRC862E
KRC863E
KRC864E
R1
100
22
Input Resistor
k
47
Marking
Type Name
6
5
4
MARK SPEC
TYPE
KRC860E
NK
KRC861E
KRC862E
NN
KRC863E
NO
KRC864E
NP
MARK
NM
1
2
3
2002. 7. 10
Revision No : 2
1/4
KRC860E~KRC864E
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
KRC860E
SYMBOL
TEST CONDITION
MIN.
TYP.
0.025
0.03
0.3
MAX.
UNIT
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
KRC861E
tr
Rise Time
Storage Time
Fall Time
KRC862E
KRC863E
KRC864E
KRC860E
KRC861E
KRC862E
KRC863E
KRC864E
KRC860E
KRC861E
KRC862E
KRC863E
KRC864E
0.06
0.11
3.0
2.0
VO=5V
Switching
Time
tstg
VIN=5V
RL=1k
6.0
S
4.0
5.0
0.2
0.12
2.0
tf
0.9
1.4
2002. 7. 10
Revision No : 2
2/4
KRC860E~KRC864E
VCE(sat) - I C
hFE - I C
KRC860E
KRC860E
2k
1k
2
1
I
/I =20
B
C
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
50
30
0.05
0.03
Ta=25 C
Ta=-25 C
V
=5V
30
CE
0.01
10
0.1
0.3
1
3
10
100
0.1
0.3
1
3
10
30
100
100
100
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
hFE - I C
VCE(sat) - IC
KRC861E
KRC861E
2
1
2k
1k
I
C
/I =20
B
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
0.05
0.03
50
30
Ta=25 C
Ta=-25 C
V
=5V
30
CE
10
0.01
0.1
0.3
1
3
10
100
0.1
0.3
1
3
10
30
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
h FE - I C
VCE(sat) - IC
KRC862E
KRC862E
2k
1k
2
1
I
/I =20
B
C
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
50
30
0.05
0.03
Ta=25 C
Ta=-25 C
V
=5V
30
CE
10
0.01
0.1
0.1
0.3
1
3
10
100
0.3
1
3
10
30
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
2002. 7. 10
Revision No : 2
3/4
KRC860E~KRC864E
VCE(sat) - I C
h FE - IC
KRC863E
KRC863E
2k
1k
2
1
I
/I =20
B
C
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
50
30
0.05
0.03
Ta=25 C
V
=5V
Ta=-25 C
CE
10
0.01
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
(mA)
100
COLLECTOR CURRENT I
COLLECTOR CURRENT I (mA)
C
C
hFE - I C
VCE(sat) - IC
KRC864E
KRC864E
2k
1k
2
1
I
/I =20
B
C
500
300
0.5
0.3
Ta=100 C
Ta=25 C
Ta=-25 C
100
0.1
Ta=100 C
0.05
0.03
50
30
Ta=25 C
Ta=-25 C
V
=5V
CE
0.01
10
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
2002. 7. 10
Revision No : 2
4/4
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